- 专利标题: Process for making lead zirconate titanate (PZT) layers and/or platinum electrodes and products thereof
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申请号: US15061205申请日: 2016-03-04
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公开(公告)号: US10266936B2公开(公告)日: 2019-04-23
- 发明人: Daniel M. Potrepka , James R. Mulcahy , Ronald G. Polcawich
- 申请人: U.S. Army Research Laboratory
- 申请人地址: US DC Washington
- 专利权人: The United States of America as represented by the Secretary of the Army
- 当前专利权人: The United States of America as represented by the Secretary of the Army
- 当前专利权人地址: US DC Washington
- 代理商 Lawrence E. Anderson; Christos S. Kyriakou
- 主分类号: C23C14/08
- IPC分类号: C23C14/08 ; C23C14/18 ; C23C14/58 ; H01L41/08 ; H01L41/187 ; H01L41/316 ; H01L41/319 ; H01L41/27 ; C30B29/02 ; C30B29/16 ; C30B29/32 ; C30B29/68 ; C30B1/02 ; C30B1/10 ; C30B23/02 ; C30B25/18
摘要:
A method of making a piezoelectric device comprising providing a deposition chamber, the deposition chamber having reduced pressure therein; loading a substrate into the deposition chamber; sputter depositing hexagonal 001 oriented titanium on the substrate; providing an oxygen anneal to convert 001 oriented titanium into 100 oriented rutile TiO2; sputter depositing a 111 or 100 oriented textured conducting material for use as an electrode; sputter depositing a hexagonal 001 oriented titanium and providing an oxygen anneal in a lead oxide environment to convert 001 oriented titanium into 100 oriented rutile TiO2 or PbxTi1-xO3; sputter depositing textured lead zirconate titanate PbZrxTi1-xO3 having an 001 orientation as a piezoelectric layer, and sputter depositing a textured electrode on top of the textured lead zirconate titanate; whereby processing of the layers within the deposition chamber provides minimized exposure to ambient contamination and improved texturing in the resulting films.
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