Invention Grant
- Patent Title: Access methods of memory device using relative addressing
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Application No.: US15360134Application Date: 2016-11-23
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Publication No.: US10269423B2Publication Date: 2019-04-23
- Inventor: Youngjin Cho , Jinwoo Kim , Jaegeun Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2015-0167581 20151127
- Main IPC: G06F12/02
- IPC: G06F12/02 ; G11C13/00 ; G11C8/18 ; G11C11/16 ; G11C11/22 ; G06F13/16 ; G11C8/10
Abstract:
A method for accessing a random-accessible nonvolatile RAM includes externally receiving a base address, receiving a relative address corresponding to an increasing or decreasing size from the base address, and reading data stored in a memory area of the nonvolatile RAM or writing externally provided data into the nonvolatile RAM with reference to the base address and the relative address.
Public/Granted literature
- US20170153825A1 ACCESS METHODS OF MEMORY DEVICE USING RELATIVE ADDRESSING Public/Granted day:2017-06-01
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