Invention Grant
- Patent Title: Low resistance contacts to source or drain region of transistor
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Application No.: US15461634Application Date: 2017-03-17
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Publication No.: US10283608B2Publication Date: 2019-05-07
- Inventor: Xunyuan Zhang , Frank Mont , Mark Raymond , Chengyu Niu
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent David Cain
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L21/70 ; H01L29/45 ; H01L29/66 ; H01L21/28 ; H01L29/08 ; H01L21/768 ; H01L21/285 ; H01L29/78 ; H01L29/417
Abstract:
A conductive source/drain contact is formed within a trench overlying a raised epitaxial source/drain junction. The conductive contact includes a conductive liner and a conductive fill material formed directly over the conductive liner. The conductive fill material is selected from a platinum group metal such as ruthenium. The conductive liner may be directionally deposited into the trench and is adapted to form a metal silicide in situ through a reaction with the epitaxial layer.
Public/Granted literature
- US20180269297A1 LOW RESISTANCE RUTHENIUM-CONTAINING CONTACTS Public/Granted day:2018-09-20
Information query
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