公开(公告)号：US10283608B2

公开(公告)日：2019-05-07

申请号：US15461634

申请日：2017-03-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xunyuan Zhang ,  Frank Mont ,  Mark Raymond ,  Chengyu Niu

IPC: H01L21/4763 ,  H01L21/70 ,  H01L29/45 ,  H01L29/66 ,  H01L21/28 ,  H01L29/08 ,  H01L21/768 ,  H01L21/285 ,  H01L29/78 ,  H01L29/417

Abstract: A conductive source/drain contact is formed within a trench overlying a raised epitaxial source/drain junction. The conductive contact includes a conductive liner and a conductive fill material formed directly over the conductive liner. The conductive fill material is selected from a platinum group metal such as ruthenium. The conductive liner may be directionally deposited into the trench and is adapted to form a metal silicide in situ through a reaction with the epitaxial layer.