公开(公告)号：US20150349069A1

公开(公告)日：2015-12-03

申请号：US14822167

申请日：2015-08-10

Applicant: GLOBALFOUNDRIES Inc.

Inventor： Ruilong Xie ,  Mark Raymond ,  Robert Miller

IPC: H01L29/417 ,  H01L29/423 ,  H01L29/06 ,  H01L29/78 ,  H01L29/51

CPC classification number: H01L29/41725 ,  H01L29/0657 ,  H01L29/42356 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66666 ,  H01L29/66795 ,  H01L29/785

Abstract: A FinFET device includes a plurality of spaced-apart trenches in a semiconducting substrate, the plurality of spaced-apart trenches at least partially defining a fin for the FinFET device, wherein the fin comprises a first semiconductor material. A first layer of insulating material is positioned above a bottom surface of each of the plurality of spaced-apart trenches and an etch stop layer is positioned above an upper surface of the first layer of insulating material in each of the plurality of spaced-apart trenches. A metal silicide region is positioned on at least all sidewall surfaces of the fin that extend above the upper surface of the etch stop layer.

Abstract translation: FinFET器件在半导体衬底中包括多个间隔开的沟槽，多个间隔开的沟槽至少部分地限定FinFET器件的鳍片，其中鳍片包括第一半导体材料。 第一层绝缘材料位于多个间隔开的沟槽中的每一个的底表面上方，并且在多个间隔开的沟槽中的每一个中位于第一绝缘材料层的上表面上方的蚀刻停止层 。 金属硅化物区域位于鳍片的至少所有侧壁表面上，其在蚀刻停止层的上表面上方延伸。

公开(公告)号：US20200168504A1

公开(公告)日：2020-05-28

申请号：US16778884

申请日：2020-01-31

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vimal Kamineni ,  Ruilong Xie ,  Mark Raymond

IPC: H01L21/768 ,  H01L29/66 ,  H01L21/285 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/417

Abstract: Methods comprising forming a cobalt formation on an active feature of a semiconductor device, wherein the semiconductor device comprises an inactive feature above the cobalt formation; forming a cap on the cobalt formation; removing at least a portion of the inactive feature, wherein the cobalt formation is substantially not removed; forming a dielectric material above the cap; and forming a first contact to the cobalt formation. Systems configured to implement the methods. Semiconductor devices produced by the methods.

公开(公告)号：US10593593B2

公开(公告)日：2020-03-17

申请号：US16047470

申请日：2018-07-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vimal Kamineni ,  Ruilong Xie ,  Mark Raymond

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/82 ,  H01L29/417 ,  H01L21/8238 ,  H01L29/78 ,  H01L29/66

Abstract: Methods comprising forming a cobalt formation on an active feature of a semiconductor device, wherein the semiconductor device comprises an inactive feature above the cobalt formation; forming a cap on the cobalt formation; removing at least a portion of the inactive feature, wherein the cobalt formation is substantially not removed; forming a dielectric material above the cap; and forming a first contact to the cobalt formation. Systems configured to implement the methods. Semiconductor devices produced by the methods.

公开(公告)号：US20180006141A1

公开(公告)日：2018-01-04

申请号：US15597650

申请日：2017-05-17

Applicant: International Business Machines Corporation ,  GlobalFoundries, Inc.

Inventor： Jody Fronheiser ,  Shogo Mochizuki ,  Hiroaki Niimi ,  Balasubramanian Pranatharthiharan ,  Mark Raymond ,  Tenko Yamashita

IPC: H01L29/66 ,  H01L21/768 ,  H01L21/285 ,  H01L23/535 ,  H01L21/02

CPC classification number: H01L21/76895 ,  H01L21/02068 ,  H01L21/285 ,  H01L21/28525 ,  H01L21/76814 ,  H01L21/76831 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/0895 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/66795 ,  H01L29/785

Abstract: Forming a contact is disclosed. A trench through an interlayer dielectric layer is opened down to a substrate. The interlayer dielectric layer is formed on the substrate such that the substrate is the bottom surface of the trench. A cleaning process of the trench is performed. The bottom surface of the trench is recessed. A trench contact epitaxial layer is formed in the trench. An oxide layer is formed on top of the trench contact epitaxial layer in the trench. A metal oxide layer is formed on top of the oxide layer in the trench. A metal contact is formed on top of the metal oxide layer, where the oxide layer and the metal oxide layer together form a dipole layer.

公开(公告)号：US20200035556A1

公开(公告)日：2020-01-30

申请号：US16047470

申请日：2018-07-27

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vimal Kamineni ,  Ruilong Xie ,  Mark Raymond

IPC: H01L21/768 ,  H01L29/417 ,  H01L29/66 ,  H01L29/78 ,  H01L21/285 ,  H01L21/8238

Abstract: Methods comprising forming a cobalt formation on an active feature of a semiconductor device, wherein the semiconductor device comprises an inactive feature above the cobalt formation; forming a cap on the cobalt formation; removing at least a portion of the inactive feature, wherein the cobalt formation is substantially not removed; forming a dielectric material above the cap; and forming a first contact to the cobalt formation. Systems configured to implement the methods. Semiconductor devices produced by the methods.

公开(公告)号：US10854515B2

公开(公告)日：2020-12-01

申请号：US16778884

申请日：2020-01-31

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vimal Kamineni ,  Ruilong Xie ,  Mark Raymond

IPC: H01L21/768 ,  H01L21/285 ,  H01L21/8238 ,  H01L29/66 ,  H01L29/417 ,  H01L29/78

Abstract: Methods comprising forming a cobalt formation on an active feature of a semiconductor device, wherein the semiconductor device comprises an inactive feature above the cobalt formation; forming a cap on the cobalt formation; removing at least a portion of the inactive feature, wherein the cobalt formation is substantially not removed; forming a dielectric material above the cap; and forming a first contact to the cobalt formation. Systems configured to implement the methods. Semiconductor devices produced by the methods.

公开(公告)号：US10283608B2

公开(公告)日：2019-05-07

申请号：US15461634

申请日：2017-03-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xunyuan Zhang ,  Frank Mont ,  Mark Raymond ,  Chengyu Niu

IPC: H01L21/4763 ,  H01L21/70 ,  H01L29/45 ,  H01L29/66 ,  H01L21/28 ,  H01L29/08 ,  H01L21/768 ,  H01L21/285 ,  H01L29/78 ,  H01L29/417

Abstract: A conductive source/drain contact is formed within a trench overlying a raised epitaxial source/drain junction. The conductive contact includes a conductive liner and a conductive fill material formed directly over the conductive liner. The conductive fill material is selected from a platinum group metal such as ruthenium. The conductive liner may be directionally deposited into the trench and is adapted to form a metal silicide in situ through a reaction with the epitaxial layer.

公开(公告)号：US20180006140A1

公开(公告)日：2018-01-04

申请号：US15196335

申请日：2016-06-29

Applicant: International Business Machines Corporation ,  GlobalFoundries, Inc.

Inventor： Jody Fronheiser ,  Shogo Mochizuki ,  Hiroaki Niimi ,  Balasubramanian Pranatharthiharan ,  Mark Raymond ,  Tenko Yamashita

IPC: H01L29/66 ,  H01L21/768 ,  H01L21/285 ,  H01L23/535 ,  H01L21/02

CPC classification number: H01L21/76895 ,  H01L21/02068 ,  H01L21/285 ,  H01L21/28525 ,  H01L21/76814 ,  H01L21/76831 ,  H01L29/045 ,  H01L29/0847 ,  H01L29/0895 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/66795 ,  H01L29/785

Abstract: Forming a contact is disclosed. A trench through an interlayer dielectric layer is opened down to a substrate. The interlayer dielectric layer is formed on the substrate such that the substrate is the bottom surface of the trench. A cleaning process of the trench is performed. The bottom surface of the trench is recessed. A trench contact epitaxial layer is formed in the trench. An oxide layer is formed on top of the trench contact epitaxial layer in the trench. A metal oxide layer is formed on top of the oxide layer in the trench. A metal contact is formed on top of the metal oxide layer, where the oxide layer and the metal oxide layer together form a dipole layer.