公开(公告)号：US09679807B1

公开(公告)日：2017-06-13

申请号：US14948214

申请日：2015-11-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vimal Kamineni ,  Mark V. Raymond ,  Praneet Adusumilli ,  Chengyu Niu

IPC: H01L21/768 ,  H01L23/522 ,  H01L29/78

CPC classification number: H01L23/535 ,  H01L21/28518 ,  H01L21/31116 ,  H01L21/67207 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76895 ,  H01L23/5226 ,  H01L23/53266 ,  H01L23/53295 ,  H01L29/45 ,  H01L29/78

Abstract: Methods, apparatus, and systems for fabricating a semiconductor device comprising a semiconductor substrate; an oxide layer above the semiconductor substrate; a first metal component comprising tungsten disposed within the oxide layer; an interlayer dielectric (ILD) above the oxide layer, wherein the ILD comprises a trench and a bottom of the trench comprises at least a portion of the top of the first metal component; a barrier material disposed on sidewalls and the bottom of the trench; and a second metal component disposed in the trench.

公开(公告)号：US09111938B2

公开(公告)日：2015-08-18

申请号：US14538944

申请日：2014-11-12

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc. ,  Renesas Electronic Corporation ,  STMICROELECTRONICS, INC.

Inventor： Frieder H. Baumann ,  Tibor Bolom ,  Chao-Kun Hu ,  Koichi Motoyama ,  Chengyu Niu ,  Andrew H. Simon

IPC: H01L23/532 ,  H01L21/768

CPC classification number: H01L23/53238 ,  H01L21/76804 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure having a diffusion barrier positioned adjacent to a sidewall and a bottom of an opening being etched in a layer of dielectric material. The structure also having a metal liner positioned directly on top of the diffusion barrier, a seed layer positioned directly on top of the metal liner, wherein the seed layer is made from a material comprising copper, a copper material positioned directly on top of the seed layer, a metallic cap positioned directly on top of and selective to the copper material, and a capping layer positioned directly on top of and adjacent to the metallic cap.

公开(公告)号：US20170148669A1

公开(公告)日：2017-05-25

申请号：US14948214

申请日：2015-11-20

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vimal Kamineni ,  Mark V. Raymond ,  Praneet Adusumilli ,  Chengyu Niu

IPC: H01L21/768 ,  H01L23/522 ,  H01L29/78

CPC classification number: H01L23/535 ,  H01L21/28518 ,  H01L21/31116 ,  H01L21/67207 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76895 ,  H01L23/5226 ,  H01L23/53266 ,  H01L23/53295 ,  H01L29/45 ,  H01L29/78

Abstract: Methods, apparatus, and systems for fabricating a semiconductor device comprising a semiconductor substrate; an oxide layer above the semiconductor substrate; a first metal component comprising tungsten disposed within the oxide layer; an interlayer dielectric (ILD) above the oxide layer, wherein the ILD comprises a trench and a bottom of the trench comprises at least a portion of the top of the first metal component; a barrier material disposed on sidewalls and the bottom of the trench; and a second metal component disposed in the trench.

公开(公告)号：US20150061135A1

公开(公告)日：2015-03-05

申请号：US14538944

申请日：2014-11-12

Applicant: International Business Machines Corporation ,  GLOBALFOUNDRIES Inc. ,  Renesas Electronic Corporation ,  STMICROELECTRONICS, INC.

Inventor： Frieder H. Baumann ,  Tibor Bolom ,  Chao-Kun Hu ,  Koichi Motoyama ,  Chengyu Niu ,  Andrew H. Simon

IPC: H01L23/532

CPC classification number: H01L23/53238 ,  H01L21/76804 ,  H01L21/76843 ,  H01L21/76849 ,  H01L21/76873 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A structure having a diffusion barrier positioned adjacent to a sidewall and a bottom of an opening being etched in a layer of dielectric material. The structure also having a metal liner positioned directly on top of the diffusion barrier, a seed layer positioned directly on top of the metal liner, wherein the seed layer is made from a material comprising copper, a copper material positioned directly on top of the seed layer, a metallic cap positioned directly on top of and selective to the copper material, and a capping layer positioned directly on top of and adjacent to the metallic cap.

Abstract translation: 具有位于邻近侧壁的扩散阻挡层的结构和在介电材料层中蚀刻的开口的底部。 该结构还具有直接位于扩散阻挡层顶部的金属衬垫，直接位于金属衬垫顶部上的种子层，其中种子层由包括铜的材料制成，铜材料直接位于种子顶部 层，直接位于铜材料的顶部和选择性上的金属盖，以及直接位于金属盖的顶部并且邻近金属盖的封盖层。

公开(公告)号：US10026693B2

公开(公告)日：2018-07-17

申请号：US15589829

申请日：2017-05-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vimal Kamineni ,  Mark V. Raymond ,  Praneet Adusumilli ,  Chengyu Niu

IPC: H01L23/522 ,  H01L23/535 ,  H01L21/768 ,  H01L29/78 ,  H01L21/285 ,  H01L21/311 ,  H01L21/67 ,  H01L23/532 ,  H01L29/45

Abstract: Methods, apparatus, and systems for fabricating a semiconductor device comprising a semiconductor substrate; an oxide layer above the semiconductor substrate; a first metal component comprising tungsten disposed within the oxide layer; an interlayer dielectric (ILD) above the oxide layer, wherein the ILD comprises a trench and a bottom of the trench comprises at least a portion of the top of the first metal component; a barrier material disposed on sidewalls and the bottom of the trench; and a second metal component disposed in the trench.

公开(公告)号：US20140138837A1

公开(公告)日：2014-05-22

申请号：US13682326

申请日：2012-11-20

Applicant: STMICROELECTRONICS, INC. ,  INTERNATIONAL BUSINESS MACHINES CORPORATION ,  GLOBALFOUNDRIES INC

Inventor： Chengyu Niu ,  Andrew Simon ,  Tibor Bolom

IPC: H01L21/768 ,  H01L23/485

CPC classification number: H01L21/76846 ,  H01L21/76849 ,  H01L21/76867 ,  H01L21/76873 ,  H01L23/53238 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A trench is opened in a dielectric layer. The trench is then lined with a sandwiched diffusion barrier and metal liner structure and a metal seed layer. The sandwiched diffusion barrier and metal liner structure includes a conformal metal liner layer sandwiched between a first diffusion barrier layer and a second diffusion barrier layer. The metal seed layer is at least lightly doped. The lined trench is then filled by electroplating with a metal fill material. A dielectric cap layer is then deposited over the metal filled trench. Dopant from the doped metal seed layer is then migrated to an interface between the metal filled trench and the dielectric cap layer to form a self-aligned metal cap.

Abstract translation: 沟槽在电介质层中打开。 然后将沟槽衬有夹层扩散阻挡层和金属衬垫结构和金属种子层。 夹层扩散阻挡层和金属衬垫结构包括夹在第一扩散阻挡层和第二扩散阻挡层之间的共形金属衬垫层。 金属种子层至少轻掺杂。 然后用金属填充材料电镀填充衬里的沟槽。 然后在金属填充的沟槽上沉积电介质盖层。 掺杂金属种子层的掺杂剂然后迁移到金属填充沟槽和电介质盖层之间的界面，以形成自对准的金属帽。

公开(公告)号：US10283608B2

公开(公告)日：2019-05-07

申请号：US15461634

申请日：2017-03-17

Applicant: GLOBALFOUNDRIES INC.

Inventor： Xunyuan Zhang ,  Frank Mont ,  Mark Raymond ,  Chengyu Niu

IPC: H01L21/4763 ,  H01L21/70 ,  H01L29/45 ,  H01L29/66 ,  H01L21/28 ,  H01L29/08 ,  H01L21/768 ,  H01L21/285 ,  H01L29/78 ,  H01L29/417

Abstract: A conductive source/drain contact is formed within a trench overlying a raised epitaxial source/drain junction. The conductive contact includes a conductive liner and a conductive fill material formed directly over the conductive liner. The conductive fill material is selected from a platinum group metal such as ruthenium. The conductive liner may be directionally deposited into the trench and is adapted to form a metal silicide in situ through a reaction with the epitaxial layer.

公开(公告)号：US20170243823A1

公开(公告)日：2017-08-24

申请号：US15589829

申请日：2017-05-08

Applicant: GLOBALFOUNDRIES INC.

Inventor： Vimal Kamineni ,  Mark V. Raymond ,  Praneet Adusumilli ,  Chengyu Niu

IPC: H01L23/535 ,  H01L29/45 ,  H01L21/67 ,  H01L21/285 ,  H01L21/311 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L23/535 ,  H01L21/28518 ,  H01L21/31116 ,  H01L21/67207 ,  H01L21/76802 ,  H01L21/76805 ,  H01L21/7684 ,  H01L21/76843 ,  H01L21/76895 ,  H01L23/5226 ,  H01L23/53266 ,  H01L23/53295 ,  H01L29/45 ,  H01L29/78

Abstract: Methods, apparatus, and systems for fabricating a semiconductor device comprising a semiconductor substrate; an oxide layer above the semiconductor substrate; a first metal component comprising tungsten disposed within the oxide layer; an interlayer dielectric (ILD) above the oxide layer, wherein the ILD comprises a trench and a bottom of the trench comprises at least a portion of the top of the first metal component; a barrier material disposed on sidewalls and the bottom of the trench; and a second metal component disposed in the trench.