Invention Grant
- Patent Title: Semiconductor device with metal gate
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Application No.: US15981913Application Date: 2018-05-17
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Publication No.: US10290723B2Publication Date: 2019-05-14
- Inventor: Chun-Tsen Lu , Chien-Ming Lai , Lu-Sheng Chou , Ya-Huei Tsai , Ching-Hsiang Chiu , Yu-Tung Hsiao , Chen-Ming Huang , Kun-Ju Li , Yu-Ping Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: CN201510467637 20150803
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L29/66 ; H01L29/423 ; H01L29/49 ; C22C32/00 ; H01L21/28 ; B32B1/00 ; B32B18/00
Abstract:
A semiconductor device includes a substrate and a gate structure on the substrate, in which the gate structure includes a high-k dielectric layer on the substrate and a bottom barrier metal (BBM) layer on the high-k dielectric layer. Preferably, the BBM layer includes a top portion, a middle portion, and a bottom portion, the middle portion being a nitrogen rich portion, the top portion and the bottom portion being titanium rich portions, and the top portion, the middle portion, and the bottom portion are of same material composition.
Public/Granted literature
- US20180269308A1 SEMICONDUCTOR DEVICE WITH METAL GATE Public/Granted day:2018-09-20
Information query
IPC分类:
