Invention Grant
- Patent Title: Large area, low-defect gallium-containing nitride crystals, method of making, and method of use
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Application No.: US15226552Application Date: 2016-08-02
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Publication No.: US10301745B2Publication Date: 2019-05-28
- Inventor: Mark P. D'Evelyn , Dirk Ehrentraut , Wenkan Jiang , Bradley C. Downey
- Applicant: SLT TECHNOLOGIES, INC.
- Applicant Address: US CA Los Angeles
- Assignee: SLT TECHNOLOGIES, INC.
- Current Assignee: SLT TECHNOLOGIES, INC.
- Current Assignee Address: US CA Los Angeles
- Agency: Patterson & Sheridan, LLP
- Main IPC: C30B33/00
- IPC: C30B33/00 ; C30B33/06 ; C30B29/40 ; C30B25/18 ; C30B25/02 ; C30B7/10 ; C30B25/20 ; H01L29/04 ; H01L29/20 ; H01L31/0304 ; H01L33/32 ; H01S5/32 ; H01S5/323
Abstract:
An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.
Public/Granted literature
- US20170029978A1 LARGE AREA, LOW-DEFECT GALLIUM-CONTAINING NITRIDE CRYSTALS, METHOD OF MAKING, AND METHOD OF USE Public/Granted day:2017-02-02
Information query
