公开(公告)号：US10301745B2

公开(公告)日：2019-05-28

申请号：US15226552

申请日：2016-08-02

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Mark P. D'Evelyn ,  Dirk Ehrentraut ,  Wenkan Jiang ,  Bradley C. Downey

IPC: C30B33/00 ,  C30B33/06 ,  C30B29/40 ,  C30B25/18 ,  C30B25/02 ,  C30B7/10 ,  C30B25/20 ,  H01L29/04 ,  H01L29/20 ,  H01L31/0304 ,  H01L33/32 ,  H01S5/32 ,  H01S5/323

Abstract: An ultralow defect gallium-containing nitride crystal and methods of making ultralow defect gallium-containing nitride crystals are disclosed. The crystals are useful as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and photoelectrochemical water splitting for hydrogen generators.

公开(公告)号：US10648102B2

公开(公告)日：2020-05-12

申请号：US15865391

申请日：2018-01-09

Applicant: SLT TECHNOLOGIES, INC.

Inventor： Wenkan Jiang ,  Dirk Ehrentraut ,  Mark P. D'Evelyn

IPC: C30B29/40 ,  C01B21/06 ,  H01L29/20 ,  H01L29/30 ,  C30B7/10

Abstract: Gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001) +c-plane and a (000-1) −c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm−3; an impurity concentration of oxygen between about 2×1017 cm−3 and about 1×1020 cm−3; an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and CI greater than about 1×1016 cm−3; a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1; and wherein, at wavenumbers between about 3200 cm−1 and about 3400 cm−1 and between about 3075 cm−1 and about 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm−1.

公开(公告)号：US20210249266A1

公开(公告)日：2021-08-12

申请号：US17173169

申请日：2021-02-10

Applicant: SLT Technologies, Inc.

Inventor： Mark P. D'Evelyn ,  Wenkan Jiang ,  Drew W. Cardwell ,  Dirk Ehrentraut

IPC: H01L21/02 ,  H01L29/36 ,  H01L29/20

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US11898269B2

公开(公告)日：2024-02-13

申请号：US16868528

申请日：2020-05-06

Applicant: SLT Technologies, Inc

Inventor： Wenkan Jiang ,  Dirk Ehrentraut ,  Mark P. D'Evelyn

IPC: C30B29/40 ,  C01B21/06 ,  H01L29/20 ,  H01L29/30 ,  C30B7/10

CPC classification number: C30B29/406 ,  C01B21/0632 ,  C30B7/105 ,  H01L29/2003 ,  H01L29/30 ,  C01P2002/30 ,  C01P2002/74 ,  C01P2002/80 ,  C01P2006/80

Abstract: A gallium-containing nitride crystals are disclosed, comprising: a top surface having a crystallographic orientation within about 5 degrees of a plane selected from a (0001)+c-plane and a (000-1)−c-plane; a substantially wurtzite structure; n-type electronic properties; an impurity concentration of hydrogen greater than about 5×1017 cm−3, an impurity concentration of oxygen between about 2×1017 cm−3 and about 1×1020 cm−3, an [H]/[O] ratio of at least 0.3; an impurity concentration of at least one of Li, Na, K, Rb, Cs, Ca, F, and Cl greater than about 1×1016 cm−3, a compensation ratio between about 1.0 and about 4.0; an absorbance per unit thickness of at least 0.01 cm−1 at wavenumbers of approximately 3175 cm−1, 3164 cm−1, and 3150 cm−1, and wherein, at wavenumbers between about 3200 cm−1 and about 3400 cm−1 and between about 3075 cm−1 and about 3125 cm−1, said gallium-containing nitride crystal is essentially free of infrared absorption peaks having an absorbance per unit thickness greater than 10% of the absorbance per unit thickness at 3175 cm.

公开(公告)号：US11721549B2

公开(公告)日：2023-08-08

申请号：US17173169

申请日：2021-02-10

Applicant: SLT Technologies, Inc.

Inventor： Mark P. D'Evelyn ,  Wenkan Jiang ,  Drew W. Cardwell ,  Dirk Ehrentraut

IPC: H01L29/20 ,  H01L29/36 ,  H01L21/02

CPC classification number: H01L21/02647 ,  H01L21/0243 ,  H01L21/0254 ,  H01L21/02389 ,  H01L21/02642 ,  H01L29/2003 ,  H01L29/36

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.

公开(公告)号：US11705322B2

公开(公告)日：2023-07-18

申请号：US16882219

申请日：2020-05-22

Applicant: SLT Technologies, Inc

Inventor： Wenkan Jiang ,  Mark P. D'Evelyn ,  Derrick S. Kamber ,  Dirk Ehrentraut ,  Jonathan D. Cook ,  James Wenger

IPC: C30B7/10 ,  C30B7/00 ,  C30B29/40 ,  H01L29/20 ,  H01L21/02 ,  C30B33/10 ,  H01L29/778 ,  H01L33/32

CPC classification number: H01L21/02005 ,  C30B7/005 ,  C30B7/105 ,  C30B29/406 ,  C30B33/10 ,  H01L21/0254 ,  H01L21/02642 ,  H01L21/02647 ,  H01L29/2003 ,  H01L29/7788 ,  H01L33/32

Abstract: Embodiments of the present disclosure include techniques related to techniques for processing materials for manufacture of group-III metal nitride and gallium based substrates. More specifically, embodiments of the disclosure include techniques for growing large area substrates using a combination of processing techniques. Merely by way of example, the disclosure can be applied to growing crystals of GaN, AlN, InN, InGaN, AlGaN, and AlInGaN, and others for manufacture of bulk or patterned substrates. Such bulk or patterned substrates can be used for a variety of applications including optoelectronic and electronic devices, lasers, light emitting diodes, solar cells, photo electrochemical water splitting and hydrogen generation, photodetectors, integrated circuits, and transistors, and others.