Invention Grant
- Patent Title: Digitally trimmable integrated resistors including resistive memory elements
-
Application No.: US15439800Application Date: 2017-02-22
-
Publication No.: US10347309B2Publication Date: 2019-07-09
- Inventor: Jaydeep P. Kulkarni , Ashoke Ravi , Dinesh Somasekhar , Ganesh Balamurugan , Sudip Shekhar , Tawfiq Musah , Tzu-Chien Hsueh
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/16 ; G05F3/00 ; G11C13/00 ; H03H11/22 ; H04L25/00 ; H03K19/0185 ; H03K3/356 ; H03M1/12 ; H03M1/66 ; H04L25/03 ; H03M1/36 ; H03M1/76

Abstract:
Embodiments include a resistor, coupled on a signal path, that includes one or more resistive memory elements, such as one or more magnetic tunnel junctions (MTJs). The resistance of the resistive memory elements may be digitally trimmable to adjust a resistance of the resistor on the signal path. The resistor may be incorporated into an analog or mixed signal circuit to pass an analog signal on the signal path. Other embodiments may be described and claimed.
Public/Granted literature
- US20170229161A1 DIGITALLY TRIMMABLE INTEGRATED RESISTORS INCLUDING RESISTIVE MEMORY ELEMENTS Public/Granted day:2017-08-10
Information query