Invention Grant
- Patent Title: Semiconductor devices
-
Application No.: US15926572Application Date: 2018-03-20
-
Publication No.: US10347627B2Publication Date: 2019-07-09
- Inventor: Moon Gi Cho , Hyeonuk Kim , Jongchan Shin , Eryung Hwang , Jaeseok Yang , Jinwoo Jeong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: KR10-2017-0075059 20170614
- Main IPC: H01L27/08
- IPC: H01L27/08 ; H01L27/11 ; H01L23/52 ; H01L29/06 ; H01L27/088 ; H01L23/528 ; H01L27/11565 ; H01L27/11587 ; H01L27/11519 ; H01L27/11504
Abstract:
Semiconductor devices are provided. A semiconductor device includes a gate structure and an adjacent contact. The semiconductor device includes a connector that is connected to the contact. In some embodiments, the semiconductor device includes a wiring pattern that is connected to the connector. Moreover, in some embodiments, the connector is adjacent a boundary between first and second cells of the semiconductor device.
Public/Granted literature
- US20180366463A1 SEMICONDUCTOR DEVICES Public/Granted day:2018-12-20
Information query
IPC分类:
