公开(公告)号：US20210167063A1

公开(公告)日：2021-06-03

申请号：US17170252

申请日：2021-02-08

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon Gi Cho ,  Hyeonuk Kim ,  Jongchan Shin ,  Eryung Hwang ,  Jaeseok Yang ,  Jinwoo Jeong

IPC: H01L27/088 ,  H01L23/528 ,  H01L29/06 ,  H01L27/02 ,  H01L27/118 ,  H01L29/78

Abstract: Semiconductor devices are provided. A semiconductor device includes a gate structure and an adjacent contact. The semiconductor device includes a connector that is connected to the contact. In some embodiments, the semiconductor device includes a wiring pattern that is connected to the connector. Moreover, in some embodiments, the connector is adjacent a boundary between first and second cells of the semiconductor device.

公开(公告)号：US10930648B2

公开(公告)日：2021-02-23

申请号：US16422199

申请日：2019-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon Gi Cho ,  Hyeonuk Kim ,  Jongchan Shin ,  Eryung Hwang ,  Jaeseok Yang ,  Jinwoo Jeong

IPC: H01L27/08 ,  H01L27/02 ,  H01L27/11 ,  H01L23/52 ,  H01L29/06 ,  H01L29/78 ,  H01L27/088 ,  H01L23/528 ,  H01L27/118 ,  H01L27/11565 ,  H01L27/11587 ,  H01L27/11519 ,  H01L27/11504 ,  H01L21/8234 ,  H01L23/522 ,  H01L23/532 ,  H01L27/092 ,  H01L29/417

Abstract: Semiconductor devices are provided. A semiconductor device includes a gate structure and an adjacent contact. The semiconductor device includes a connector that is connected to the contact. In some embodiments, the semiconductor device includes a wiring pattern that is connected to the connector. Moreover, in some embodiments, the connector is adjacent a boundary between first and second cells of the semiconductor device.

公开(公告)号：US20180366463A1

公开(公告)日：2018-12-20

申请号：US15926572

申请日：2018-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon Gi Cho ,  Hyeonuk Kim ,  Jongchan Shin ,  Eryung Hwang ,  Jaeseok Yang ,  Jinwoo Jeong

IPC: H01L27/088 ,  H01L29/06 ,  H01L23/528

CPC classification number: H01L27/088 ,  H01L21/823475 ,  H01L21/823481 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/53233 ,  H01L23/53295 ,  H01L27/0207 ,  H01L27/092 ,  H01L27/11504 ,  H01L27/11519 ,  H01L27/11565 ,  H01L27/11587 ,  H01L27/11807 ,  H01L29/0646 ,  H01L29/785 ,  H01L2027/11829 ,  H01L2027/11875

Abstract: Semiconductor devices are provided. A semiconductor device includes a gate structure and an adjacent contact. The semiconductor device includes a connector that is connected to the contact. In some embodiments, the semiconductor device includes a wiring pattern that is connected to the connector. Moreover, in some embodiments, the connector is adjacent a boundary between first and second cells of the semiconductor device.

公开(公告)号：US20190287965A1

公开(公告)日：2019-09-19

申请号：US16422199

申请日：2019-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon Gi Cho ,  Hyeonuk Kim ,  Jongchan Shin ,  Eryung Hwang ,  Jaeseok Yang ,  Jinwoo Jeong

IPC: H01L27/088 ,  H01L29/06 ,  H01L27/02 ,  H01L29/78 ,  H01L27/118 ,  H01L23/528

Abstract: Semiconductor devices are provided. A semiconductor device includes a gate structure and an adjacent contact. The semiconductor device includes a connector that is connected to the contact. In some embodiments, the semiconductor device includes a wiring pattern that is connected to the connector. Moreover, in some embodiments, the connector is adjacent a boundary between first and second cells of the semiconductor device.

公开(公告)号：US10347627B2

公开(公告)日：2019-07-09

申请号：US15926572

申请日：2018-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon Gi Cho ,  Hyeonuk Kim ,  Jongchan Shin ,  Eryung Hwang ,  Jaeseok Yang ,  Jinwoo Jeong

IPC: H01L27/08 ,  H01L27/11 ,  H01L23/52 ,  H01L29/06 ,  H01L27/088 ,  H01L23/528 ,  H01L27/11565 ,  H01L27/11587 ,  H01L27/11519 ,  H01L27/11504

Abstract: Semiconductor devices are provided. A semiconductor device includes a gate structure and an adjacent contact. The semiconductor device includes a connector that is connected to the contact. In some embodiments, the semiconductor device includes a wiring pattern that is connected to the connector. Moreover, in some embodiments, the connector is adjacent a boundary between first and second cells of the semiconductor device.