Invention Grant
- Patent Title: Magnetic memory devices having conductive pillar structures including patterning residue components
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Application No.: US15340330Application Date: 2016-11-01
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Publication No.: US10347819B2Publication Date: 2019-07-09
- Inventor: Jongchul Park , Byoungjae Bae , Inho Kim , Shin Kwon , Eunsun Noh , Insun Park , Sangmin Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2014-0001314 20140106
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/08 ; H01L21/033 ; G11C11/16 ; H01L43/02 ; H01L43/10 ; H01L43/12

Abstract:
Methods of manufacturing a semiconductor device include forming a conductive layer on a substrate, forming an air gap or other cavity between the conductive layer and the substrate, and patterning the conductive layer to expose the air gap. The methods may further include forming conductive pillars between the substrate and the conductive layer. The air gap may be positioned between the conductive pillars.
Public/Granted literature
- US20170047509A1 DEVICES USING CAVITIES TO DISTRIBUTE CONDUCTIVE PATTERNING RESIDUE AND DEVICES FABRICATED USING THE SAME Public/Granted day:2017-02-16
Information query
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