Invention Grant
- Patent Title: Pellicle structures and methods of fabricating thereof
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Application No.: US16010118Application Date: 2018-06-15
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Publication No.: US10353285B2Publication Date: 2019-07-16
- Inventor: Hsin-Chang Lee , Pei-Cheng Hsu , Yun-Yue Lin , Hsuan-Chen Chen , Hsuan-I Wang , Anthony Yen
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/22
- IPC: G03F1/22 ; G03F1/62 ; G03F1/64 ; G03F7/20

Abstract:
A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.
Public/Granted literature
- US20180292744A1 PELLICLE STRUCTURES AND METHODS OF FABRICATING THEREOF Public/Granted day:2018-10-11
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