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公开(公告)号:US10001701B1
公开(公告)日:2018-06-19
申请号:US15380121
申请日:2016-12-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Pei-Cheng Hsu , Hsin-Chang Lee , Yun-Yue Lin , Hsuan-Chen Chen , Hsuan-I Wang , Anthony Yen
Abstract: A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.
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公开(公告)号:US10353285B2
公开(公告)日:2019-07-16
申请号:US16010118
申请日:2018-06-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Hsin-Chang Lee , Pei-Cheng Hsu , Yun-Yue Lin , Hsuan-Chen Chen , Hsuan-I Wang , Anthony Yen
Abstract: A structure including an EUV mask and a pellicle attached to the EUV mask. The pellicle includes a pellicle frame and a plurality of pellicle membrane layers attached to the pellicle frame. The plurality of pellicle membrane layers include at least one core pellicle membrane layer and an additional pellicle membrane layer is disposed on the at least one core pellicle membrane layer. In some embodiments, the additional pellicle membrane layer is a material having a thermal emissivity greater than 0.2, a transmittance greater than 80%, and a refractive index (n) for 13.5 nanometer source of greater than 0.9.
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