- 专利标题: Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device
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申请号: US15314471申请日: 2015-08-12
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公开(公告)号: US10403497B2公开(公告)日: 2019-09-03
- 发明人: Yusuke Fukuda , Yoshiyuki Watanabe , Shunichi Nakamura
- 申请人: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- 申请人地址: JP Tokyo
- 专利权人: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- 当前专利权人: SHINDENGEN ELECTRIC MANUFACTURING CO., LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Hauptman Ham, LLP
- 国际申请: PCT/JP2015/072883 WO 20150812
- 国际公布: WO2017/026068 WO 20170216
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/268 ; H01L29/45 ; H01L29/34 ; H01L29/16 ; H01L21/28 ; H01L21/302 ; H01L29/872 ; H01L29/66 ; H01L29/06 ; H01L29/861 ; H01L29/868 ; H01L21/04 ; H01L29/78
摘要:
A method of manufacturing a silicon carbide semiconductor device includes, in order: polishing a silicon carbide semiconductor base body from a second main surface side thus forming unevenness on a second main surface; forming a thin metal film made of metal capable of forming a metal carbide on the second main surface of the silicon carbide semiconductor base body; irradiating a laser beam which falls within a visible region or within an infrared region to the thin metal film so as to heat the thin metal film thus forming a metal carbide on a boundary face between the silicon carbide semiconductor base body and the thin metal film; etching a metal containing byproduct layer possibly formed on a surface side of the metal carbide by a non-oxidizing chemical solution thus exposing a surface of the metal carbide; and forming a cathode electrode on the metal carbide.
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