- 专利标题: Multi-heterojunction nanoparticles, methods of manufacture thereof and articles comprising the same
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申请号: US14599181申请日: 2015-01-16
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公开(公告)号: US10510924B2公开(公告)日: 2019-12-17
- 发明人: Moonsub Shim , Nuri Oh , You Zhai , Sooji Nam , Peter Trefonas, III , Kishori Deshpande , Jake Joo
- 申请人: The Board of Trustees of the University of Illinois , Rohm and Haas Electronic Materials LLC , Dow Global Technologies LLC
- 申请人地址: US IL Urbana US MA Marlborough US MI Midland
- 专利权人: The Board of Trustees of the University of Illinois,Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
- 当前专利权人: The Board of Trustees of the University of Illinois,Rohm and Haas Electronic Materials LLC,Dow Global Technologies LLC
- 当前专利权人地址: US IL Urbana US MA Marlborough US MI Midland
- 代理机构: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- 代理商 Peter F. Corless
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L29/12 ; H01L33/06 ; B82Y10/00 ; B82Y30/00 ; B82Y40/00 ; H01L31/0296 ; H01L31/0352 ; H01L33/18 ; H01L21/02 ; H01L51/50 ; H01L29/225 ; H01L31/18 ; H01L33/00 ; H01L33/28 ; H01L33/50 ; H01L51/00 ; B82Y20/00
摘要:
Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other.
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