Invention Grant
- Patent Title: Devices with backside metal structures and methods of formation thereof
-
Application No.: US15951995Application Date: 2018-04-12
-
Publication No.: US10535553B2Publication Date: 2020-01-14
- Inventor: Oliver Hellmund , Ingo Muri , Johannes Baumgartl , Iris Moder , Thomas Christian Neidhart , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/41
- IPC: H01L29/41 ; H01L21/762 ; H01L21/28 ; H01L21/306 ; H01L21/311 ; H01L29/423 ; H01L29/66 ; H01L29/78 ; H01L21/3105
Abstract:
A semiconductor device includes a trench extending through a semiconductor substrate and an epitaxial layer disposed over a first side of the semiconductor substrate. The epitaxial layer partially fills a portion of the trench. The semiconductor device further includes a back side metal layer disposed over a second side of the semiconductor substrate. The back side metal layer extends into the trench and fills the remaining portion of the trench. The epitaxial layer partially filling the trench contacts the back side metal layer filling the remaining portion within the trench.
Public/Granted literature
- US20180233399A1 Devices with Backside Metal Structures and Methods of Formation Thereof Public/Granted day:2018-08-16
Information query
IPC分类:
