Invention Grant
- Patent Title: System and method for in-situ programming and read operation adjustments in a non-volatile memory
-
Application No.: US15928976Application Date: 2018-03-22
-
Publication No.: US10559370B2Publication Date: 2020-02-11
- Inventor: Xiang Yang , Piyush Dak , Wei Zhao , Huai-Yuan Tseng , Deepanshu Dutta , Mohan Dunga
- Applicant: SanDisk Technologies LLC
- Applicant Address: US TX Plano
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Plano
- Agency: Foley & Lardner LLP
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/34 ; G11C16/32 ; G11C16/26 ; G11C16/10 ; G11C16/24 ; G11C11/56 ; G11C16/04

Abstract:
A circuit includes a detection circuit configured to determine a capacitance delay (RC-delay) in an initial stage of a read or program operation and to adjust timing for detecting data in a subsequent stage, or portion of a stage, of the same read or programming operation. In particular, during a program operation a detection circuit may be configured to detect a pre-charge time for a bit line and adjust a timing of subsequent verify stages of the bit line during the same program operation based on the detected pre-charge time. Additionally, a word line circuit may be configured to detect a pre-charge time for a word line during an initial stage of a read operation and adjust read timing for a subsequent portion of the same read stage, or subsequent read stage of the read operation based on the detected word line pre-charge time.
Public/Granted literature
- US20190295669A1 SYSTEM AND METHOD FOR IN-SITU PROGRAMMING AND READ OPERATION ADJUSTMENTS IN A NON-VOLATILE MEMORY Public/Granted day:2019-09-26
Information query