Invention Grant
- Patent Title: Low thickness dependent work-function nMOS integration for metal gate
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Application No.: US16033880Application Date: 2018-07-12
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Publication No.: US10608097B2Publication Date: 2020-03-31
- Inventor: Paul F. Ma , Seshadri Ganguli , Shih Chung Chen , Rajesh Sathiyanarayanan , Atashi Basu , Lin Dong , Naomi Yoshida , Sang Ho Yu , Liqi Wu
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L29/51
- IPC: H01L29/51 ; H01L21/28 ; H01L29/40 ; H01L29/49 ; H01L21/285 ; H01L21/8234 ; H01L21/8238
Abstract:
Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.
Public/Granted literature
- US20190019874A1 Low Thickness Dependent Work-Function nMOS Integration For Metal Gate Public/Granted day:2019-01-17
Information query
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