公开(公告)号：US10608097B2

公开(公告)日：2020-03-31

申请号：US16033880

申请日：2018-07-12

Applicant: Applied Materials, Inc.

Inventor： Paul F. Ma ,  Seshadri Ganguli ,  Shih Chung Chen ,  Rajesh Sathiyanarayanan ,  Atashi Basu ,  Lin Dong ,  Naomi Yoshida ,  Sang Ho Yu ,  Liqi Wu

IPC: H01L29/51 ,  H01L21/28 ,  H01L29/40 ,  H01L29/49 ,  H01L21/285 ,  H01L21/8234 ,  H01L21/8238

Abstract: Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

公开(公告)号：US20240128091A1

公开(公告)日：2024-04-18

申请号：US18221063

申请日：2023-07-12

Applicant: Applied Materials, Inc.

Inventor： Zhonghua Yao ,  Qian Fu ,  Mark J. Saly ,  Yang Yang ,  Jeffrey W. Anthis ,  David Knapp ,  Rajesh Sathiyanarayanan

IPC: H01L21/311 ,  H01L21/67

CPC classification number: H01L21/31144 ,  H01L21/31116 ,  H01L21/67069

Abstract: A method includes providing, within an etch chamber, a base structure including a target layer disposed on a substrate, and an etch mask disposed on the target layer, dry etching, within the etch chamber, the target layer using thionyl chloride to obtain a processed base structure, and after forming the plurality of features. The processed base structure includes a plurality of features and a plurality of openings defined by the etch mask. The method further includes removing the processed base structure from the etch chamber. In some embodiments, the target layer includes carbon. In some embodiments, the dry etching is performed at a sub-zero degree temperature.

公开(公告)号：US11049722B2

公开(公告)日：2021-06-29

申请号：US16841625

申请日：2020-04-06

Applicant: Applied Materials, Inc.

Inventor： Siddarth Krishnan ,  Rajesh Sathiyanarayanan ,  Atashi Basu ,  Paul F. Ma

IPC: H01L21/28 ,  H01L21/321 ,  H01L29/51 ,  H01L21/285 ,  H01L29/40 ,  H01L29/49 ,  H01L21/02 ,  H01L29/423

Abstract: Methods of modifying the threshold voltage of metal oxide stacks are discussed. These methods utilize materials which provide larger shifts in threshold voltage while also being annealed at lower temperatures.

公开(公告)号：US20190019874A1

公开(公告)日：2019-01-17

申请号：US16033880

申请日：2018-07-12

Applicant: Applied Materials, Inc.

Inventor： Paul F. Ma ,  Seshadri Ganguli ,  Shih Chung Chen ,  Rajesh Sathiyanarayanan ,  Atashi Basu ,  Lin Dong ,  Naomi Yoshida ,  Sang Ho Yu ,  Liqi Wu

IPC: H01L29/51 ,  H01L29/49 ,  H01L21/28

Abstract: Film stacks and methods of forming film stacks including a high-k dielectric layer on a substrate, a high-k capping layer on the high-k dielectric layer, an n-metal layer on the high-k capping layer and an n-metal capping layer on the n-metal layer. The n-metal layer having an aluminum rich interface adjacent the high-k capping layer.

公开(公告)号：US20200234959A1

公开(公告)日：2020-07-23

申请号：US16841625

申请日：2020-04-06

Applicant: Applied Materials, Inc.

Inventor： Siddarth Krishnan ,  Rajesh Sathiyanarayanan ,  Atashi Basu ,  Paul F. Ma

IPC: H01L21/28 ,  H01L29/49 ,  H01L29/40 ,  H01L21/285 ,  H01L29/51 ,  H01L21/321

Abstract: Methods of modifying the threshold voltage of metal oxide stacks are discussed. These methods utilize materials which provide larger shifts in threshold voltage while also being annealed at lower temperatures.

公开(公告)号：US20190181011A1

公开(公告)日：2019-06-13

申请号：US16216500

申请日：2018-12-11

Applicant: Applied Materials, Inc.

Inventor： Siddarth Krishnan ,  Rajesh Sathiyanarayanan ,  Atashi Basu ,  Paul F. Ma

IPC: H01L21/28 ,  H01L21/321 ,  H01L29/51 ,  H01L21/285 ,  H01L29/49 ,  H01L29/40

Abstract: Methods of modifying the threshold voltage of metal oxide stacks are discussed. These methods utilize materials which provide larger shifts in threshold voltage while also being annealed at lower temperatures.