Invention Grant
- Patent Title: Fin strain in quantum dot devices
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Application No.: US15913799Application Date: 2018-03-06
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Publication No.: US10665770B2Publication Date: 2020-05-26
- Inventor: Ravi Pillarisetty , Kanwaljit Singh , Patrick H. Keys , Roman Caudillo , Hubert C. George , Zachary R. Yoscovits , Nicole K. Thomas , James S. Clarke , Roza Kotlyar , Payam Amin , Jeanette M. Roberts
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Patent Capital Group
- Main IPC: H01L39/22
- IPC: H01L39/22 ; H01L39/02 ; H01L39/24 ; H01L39/04 ; G06N10/00 ; H01L29/12 ; H01L27/18 ; H01L29/66 ; B82Y10/00 ; H01L39/14 ; H01L29/76 ; H01L29/423 ; H01L29/06 ; H01L29/16 ; H01L21/8234

Abstract:
Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a base; a fin extending away from the base, wherein the fin includes a quantum well layer; a gate above the fin; and a material on side faces of the fin; wherein the fin has a width between its side faces, and the fin is strained in the direction of the width.
Public/Granted literature
- US20190044050A1 FIN STRAIN IN QUANTUM DOT DEVICES Public/Granted day:2019-02-07
Information query
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