Invention Grant
- Patent Title: Non-contact measurement of memory cell threshold voltage
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Application No.: US16419885Application Date: 2019-05-22
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Publication No.: US10672500B2Publication Date: 2020-06-02
- Inventor: Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C29/50 ; H01L21/66 ; H01L45/00 ; H01L27/24 ; G11C29/56 ; G11C29/04

Abstract:
Methods, systems, and devices for non-contact measurement of memory cell threshold voltage, including at one or more intermediate stages of fabrication, are described. One access line may be grounded and coupled with one or more memory cells. Each of the one or more memory cells may be coupled with a corresponding floating access line. A floating access line may be scanned with an electron beam configured to set the floating access line to a particular surface voltage at the scanned bit line, and the threshold voltage of the corresponding memory cell may be determined based on whether setting the scanned bit line to the surface voltage causes a detectable amount current to flow through the corresponding memory cell.
Public/Granted literature
- US20190341122A1 NON-CONTACT MEASUREMENT OF MEMORY CELL THRESHOLD VOLTAGE Public/Granted day:2019-11-07
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