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公开(公告)号：US20190355418A1
公开(公告)日：2019-11-21
申请号：US16419895
申请日：2019-05-22
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
Abstract: Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.
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公开(公告)号：US10672500B2
公开(公告)日：2020-06-02
申请号：US16419885
申请日：2019-05-22
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
Abstract: Methods, systems, and devices for non-contact measurement of memory cell threshold voltage, including at one or more intermediate stages of fabrication, are described. One access line may be grounded and coupled with one or more memory cells. Each of the one or more memory cells may be coupled with a corresponding floating access line. A floating access line may be scanned with an electron beam configured to set the floating access line to a particular surface voltage at the scanned bit line, and the threshold voltage of the corresponding memory cell may be determined based on whether setting the scanned bit line to the surface voltage causes a detectable amount current to flow through the corresponding memory cell.
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公开(公告)号：US10403359B2
公开(公告)日：2019-09-03
申请号：US15918662
申请日：2018-03-12
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
Abstract: Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.
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Patent Agency Ranking
公开(公告)号：US20190189237A1
公开(公告)日：2019-06-20
申请号：US15849262
申请日：2017-12-20
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
CPC classification number: G11C29/50004 , G11C13/0004 , G11C13/0026 , G11C13/0028 , G11C13/0069 , G11C29/50008 , G11C29/56 , G11C29/56008 , G11C29/56016 , G11C2013/0078 , G11C2029/0403 , G11C2029/5004 , G11C2029/5602 , G11C2213/71 , G11C2213/72 , H01L22/14 , H01L27/2427 , H01L27/2463 , H01L45/06 , H01L45/144 , H01L45/1608
Abstract: Methods, systems, and devices for non-contact measurement of memory cell threshold voltage, including at one or more intermediate stages of fabrication, are described. One access line may be grounded and coupled with one or more memory cells. Each of the one or more memory cells may be coupled with a corresponding floating access line. A floating access line may be scanned with an electron beam configured to set the floating access line to a particular surface voltage at the scanned bit line, and the threshold voltage of the corresponding memory cell may be determined based on whether setting the scanned bit line to the surface voltage causes a detectable amount current to flow through the corresponding memory cell.
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公开(公告)号：US10650891B2
公开(公告)日：2020-05-12
申请号：US16419895
申请日：2019-05-22
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
Abstract: Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.
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公开(公告)号：US20190341122A1
公开(公告)日：2019-11-07
申请号：US16419885
申请日：2019-05-22
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
Abstract: Methods, systems, and devices for non-contact measurement of memory cell threshold voltage, including at one or more intermediate stages of fabrication, are described. One access line may be grounded and coupled with one or more memory cells. Each of the one or more memory cells may be coupled with a corresponding floating access line. A floating access line may be scanned with an electron beam configured to set the floating access line to a particular surface voltage at the scanned bit line, and the threshold voltage of the corresponding memory cell may be determined based on whether setting the scanned bit line to the surface voltage causes a detectable amount current to flow through the corresponding memory cell.
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公开(公告)号：US10381101B2
公开(公告)日：2019-08-13
申请号：US15849262
申请日：2017-12-20
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
Abstract: Methods, systems, and devices for non-contact measurement of memory cell threshold voltage, including at one or more intermediate stages of fabrication, are described. One access line may be grounded and coupled with one or more memory cells. Each of the one or more memory cells may be coupled with a corresponding floating access line. A floating access line may be scanned with an electron beam configured to set the floating access line to a particular surface voltage at the scanned bit line, and the threshold voltage of the corresponding memory cell may be determined based on whether setting the scanned bit line to the surface voltage causes a detectable amount current to flow through the corresponding memory cell.
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公开(公告)号：US20190189209A1
公开(公告)日：2019-06-20
申请号：US15918662
申请日：2018-03-12
Applicant: Micron Technology, Inc.
Inventor： Amitava Majumdar , Rajesh Kamana , Hongmei Wang , Shawn D. Lyonsmith , Ervin T. Hill , Zengtao T. Liu , Marlon W. Hug
CPC classification number: G11C13/048 , G11C7/005 , G11C13/0004 , G11C13/003 , G11C13/004 , G11C29/02 , G11C29/025 , G11C29/50004 , G11C29/56008 , G11C29/56016 , G11C2029/5602 , G11C2213/76
Abstract: Methods, systems, and devices for non-contact electron beam probing techniques, including at one or more intermediate stages of fabrication, are described. One subset of first access lines may be grounded and coupled with one or more memory cells. A second subset of first access lines may be floating and coupled with one or more memory cells. A second access line may correspond to each first access line and may be configured to be coupled with the corresponding first access line, by way of one or more corresponding memory cells, when scanned with an electron beam. A leakage path may be determined by comparing an optical pattern generated in part by determining a brightness of each scanned access line and comparing the generated optical pattern with a second optical pattern.
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