Invention Grant
- Patent Title: Semiconductor device including volatile and non-volatile memory cells
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Application No.: US16059317Application Date: 2018-08-09
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Publication No.: US10685708B2Publication Date: 2020-06-16
- Inventor: Chang Hoon Jeon , Yoo Cheol Shin , Jun Hee Lim , Sung Kweon Baek , Chan Ho Lee , Won Chul Jang , Sun Gyung Hwang
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@50401e1a
- Main IPC: G11C14/00
- IPC: G11C14/00 ; G11C11/401 ; H01L27/108 ; H01L23/532 ; H01L27/11582 ; H01L27/105 ; H01L27/11573
Abstract:
A semiconductor device includes a substrate having a volatile memory region and a non-volatile memory region. The volatile memory region includes a cell capacitor disposed in the substrate and a cell transistor connected to the cell capacitor. The non-volatile memory region includes a plurality of non-volatile memory cells disposed on the substrate. The volatile memory region and the non-volatile memory region are disposed side by side.
Public/Granted literature
- US20190267088A1 SEMICONDUCTOR DEVICE INCLUDING DIFFERENT TYPES OF MEMORY CELLS Public/Granted day:2019-08-29
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