公开(公告)号：US10685708B2

公开(公告)日：2020-06-16

申请号：US16059317

申请日：2018-08-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Hoon Jeon ,  Yoo Cheol Shin ,  Jun Hee Lim ,  Sung Kweon Baek ,  Chan Ho Lee ,  Won Chul Jang ,  Sun Gyung Hwang

IPC: G11C14/00 ,  G11C11/401 ,  H01L27/108 ,  H01L23/532 ,  H01L27/11582 ,  H01L27/105 ,  H01L27/11573

Abstract: A semiconductor device includes a substrate having a volatile memory region and a non-volatile memory region. The volatile memory region includes a cell capacitor disposed in the substrate and a cell transistor connected to the cell capacitor. The non-volatile memory region includes a plurality of non-volatile memory cells disposed on the substrate. The volatile memory region and the non-volatile memory region are disposed side by side.

公开(公告)号：US20190267088A1

公开(公告)日：2019-08-29

申请号：US16059317

申请日：2018-08-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chang Hoon JEON ,  Yoo Cheol Shin ,  Jun Hee Lim ,  Sung Kweon Baek ,  Chan Ho Lee ,  Won Chul Jang ,  Sun Gyung Hwang

IPC: G11C14/00 ,  G11C11/401 ,  H01L27/108 ,  H01L23/532

Abstract: A semiconductor device includes a substrate having a volatile memory region and a non-volatile memory region. The volatile memory region includes a cell capacitor disposed in the substrate and a cell transistor connected to the cell capacitor. The non-volatile memory region includes a plurality of non-volatile memory cells disposed on the substrate. The volatile memory region and the non-volatile memory region are disposed side by side.