Invention Grant
- Patent Title: Resistive memory device including a reference cell and method of controlling a reference cell to identify values stored in memory cells
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Application No.: US16127995Application Date: 2018-09-11
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Publication No.: US10762958B2Publication Date: 2020-09-01
- Inventor: Suk-soo Pyo , Hyun-taek Jung , So-hee Hwang , Tae-joong Song
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel, P.A.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@678d1044 com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6cbd8f33
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C13/00 ; G11C11/56

Abstract:
A method of controlling a reference cell in a resistive memory to identify values stored in a plurality of memory cells is provided. The method includes writing a first value to the plurality of memory cells, providing, to the reference cell, monotonically increasing or monotonically decreasing reference currents. The method includes reading the plurality of memory cells as each of the reference currents is provided to the reference cell, and determining a read reference current based on an aggregation of results of the reading.
Public/Granted literature
- US20190088322A1 RESISTIVE MEMORY DEVICE INCLUDING A REFERENCE CELL AND METHOD OF CONTROLLING A REFERENCE CELL Public/Granted day:2019-03-21
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