Invention Grant
- Patent Title: Semiconductor light emitting device
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Application No.: US16202793Application Date: 2018-11-28
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Publication No.: US10763397B2Publication Date: 2020-09-01
- Inventor: JuHeon Yoon , Jung Hwan Kil , Tae Hun Kim , Hwa Ryong Song , Jae In Sim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee IP Law, P.C.
- Priority: com.zzzhc.datahub.patent.etl.us.BibliographicData$PriorityClaim@6f732716
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/06 ; H01L33/12 ; H01L33/22 ; H01L33/46 ; H01L33/50 ; H01L33/60 ; H01L33/62 ; H01L33/42

Abstract:
A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
Public/Granted literature
- US20190273185A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2019-09-05
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