公开(公告)号：US10978618B2

公开(公告)日：2021-04-13

申请号：US17005643

申请日：2020-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JuHeon Yoon ,  Jung Hwan Kil ,  Tae Hun Kim ,  Hwa Ryong Song ,  Jae In Sim

IPC: H01L33/40 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/42 ,  H01L33/46

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.

公开(公告)号：US11929451B2

公开(公告)日：2024-03-12

申请号：US17226424

申请日：2021-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JuHeon Yoon ,  Jung Hwan Kil ,  Tae Hun Kim ,  Hwa Ryong Song ,  Jae In Sim

IPC: H01L33/40 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/38 ,  H01L33/42 ,  H01L33/46 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62

CPC classification number: H01L33/405 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/42 ,  H01L33/46 ,  H01L33/502 ,  H01L33/60 ,  H01L33/62 ,  H01L2933/0016

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.

公开(公告)号：US20210234072A1

公开(公告)日：2021-07-29

申请号：US17226424

申请日：2021-04-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JuHeon Yoon ,  Jung Hwan Kil ,  Tae Hun Kim ,  Hwa Ryong Song ,  Jae In Sim

IPC: H01L33/40 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/46 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/42

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.

公开(公告)号：US10763397B2

公开(公告)日：2020-09-01

申请号：US16202793

申请日：2018-11-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JuHeon Yoon ,  Jung Hwan Kil ,  Tae Hun Kim ,  Hwa Ryong Song ,  Jae In Sim

IPC: H01L33/40 ,  H01L33/06 ,  H01L33/12 ,  H01L33/22 ,  H01L33/46 ,  H01L33/50 ,  H01L33/60 ,  H01L33/62 ,  H01L33/42

Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.