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公开(公告)号:US10978618B2
公开(公告)日:2021-04-13
申请号:US17005643
申请日:2020-08-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JuHeon Yoon , Jung Hwan Kil , Tae Hun Kim , Hwa Ryong Song , Jae In Sim
IPC: H01L33/40 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/50 , H01L33/60 , H01L33/62 , H01L33/42 , H01L33/46
Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
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公开(公告)号:US11929451B2
公开(公告)日:2024-03-12
申请号:US17226424
申请日:2021-04-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JuHeon Yoon , Jung Hwan Kil , Tae Hun Kim , Hwa Ryong Song , Jae In Sim
IPC: H01L33/40 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/38 , H01L33/42 , H01L33/46 , H01L33/50 , H01L33/60 , H01L33/62
CPC classification number: H01L33/405 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/42 , H01L33/46 , H01L33/502 , H01L33/60 , H01L33/62 , H01L2933/0016
Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
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公开(公告)号:US20210234072A1
公开(公告)日:2021-07-29
申请号:US17226424
申请日:2021-04-09
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JuHeon Yoon , Jung Hwan Kil , Tae Hun Kim , Hwa Ryong Song , Jae In Sim
IPC: H01L33/40 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/46 , H01L33/50 , H01L33/60 , H01L33/62 , H01L33/42
Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
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公开(公告)号:US10763397B2
公开(公告)日:2020-09-01
申请号:US16202793
申请日:2018-11-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: JuHeon Yoon , Jung Hwan Kil , Tae Hun Kim , Hwa Ryong Song , Jae In Sim
IPC: H01L33/40 , H01L33/06 , H01L33/12 , H01L33/22 , H01L33/46 , H01L33/50 , H01L33/60 , H01L33/62 , H01L33/42
Abstract: A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
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