Invention Grant
- Patent Title: FinFET structure with dielectric bar containing gate to reduce effective capacitance, and method of forming same
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Application No.: US16170117Application Date: 2018-10-25
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Publication No.: US10797049B2Publication Date: 2020-10-06
- Inventor: Hui Zang , Haiting Wang , Chung Foong Tan , Guowei Xu , Ruilong Xie , Scott H. Beasor , Liu Jiang
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Hoffman Warnick LLC
- Agent Francois Pagette
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L29/08 ; H01L29/66 ; H01L29/51 ; H01L21/8234 ; H01L29/49 ; H01L29/78

Abstract:
A FinFET structure having reduced effective capacitance and including a substrate having at least two fins thereon laterally spaced from one another, a metal gate over fin tops of the fins and between sidewalls of upper portions of the fins, source/drain regions in each fin on opposing sides of the metal gate, and a dielectric bar within the metal gate located between the sidewalls of the upper portions of the fins, the dielectric bar being laterally spaced away from the sidewalls of the upper portions of the fins within the metal gate.
Public/Granted literature
Information query
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