Invention Grant
- Patent Title: Fin field effect transistor (finFET) device structure with capping layer and method for forming the same
-
Application No.: US16596209Application Date: 2019-10-08
-
Publication No.: US10797050B2Publication Date: 2020-10-06
- Inventor: Chun-Han Chen , Chen-Ming Lee , Fu-Kai Yang , Mei-Yun Wang , Jr-Hung Li , Bo-Cyuan Lu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/088
- IPC: H01L27/088 ; H01L21/8234 ; H01L29/423 ; H01L29/66 ; H01L29/78
Abstract:
A FinFET device structure is provided. The FinFET device structure includes a first gate structure formed over a fin structure, and a first capping layer formed over the first gate structure. The FinFET device structure includes a first etching stop layer formed over the first capping layer and the first gate structure, and a top surface and a sidewall surface of the first capping layer are in direct contact with the first etching stop layer.
Public/Granted literature
- US20200043924A1 FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICE STRUCTURE WITH CAPPING LAYER AND METHOD FOR FORMING THE SAME Public/Granted day:2020-02-06
Information query
IPC分类:
