- 专利标题： Self-aligned chamferless interconnect structures of semiconductor devices
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申请号： US16140545申请日： 2018-09-25
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公开(公告)号： US10804199B2公开(公告)日： 2020-10-13
- 发明人: Yongjun Shi , Ruilong Xie , Nan Fu , Chun Yu Wong
- 申请人： GLOBALFOUNDRIES INC.
- 申请人地址： KY Grand Caymand
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Caymand
- 代理商 David Cain
- 主分类号： H01L23/528
- IPC分类号： H01L23/528 ; H01L21/768 ; H01L21/027 ; H01L23/532 ; H01L21/285 ; H01L23/522 ; H01L21/321 ; H01L21/3105
摘要：
A method of fabricating interconnects in a semiconductor device is provided, which includes forming an interconnect layer with a plurality of first conductive lines formed of a first conductive material in a dielectric layer. At least one via opening is formed over the plurality of first conductive lines and an interconnect via formed of a second conductive material is formed in the via opening, wherein the formed interconnect via has a convex top surface.
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