公开(公告)号：US10804199B2

公开(公告)日：2020-10-13

申请号：US16140545

申请日：2018-09-25

Applicant: GLOBALFOUNDRIES INC.

Inventor： Yongjun Shi ,  Ruilong Xie ,  Nan Fu ,  Chun Yu Wong

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/027 ,  H01L23/532 ,  H01L21/285 ,  H01L23/522 ,  H01L21/321 ,  H01L21/3105

Abstract: A method of fabricating interconnects in a semiconductor device is provided, which includes forming an interconnect layer with a plurality of first conductive lines formed of a first conductive material in a dielectric layer. At least one via opening is formed over the plurality of first conductive lines and an interconnect via formed of a second conductive material is formed in the via opening, wherein the formed interconnect via has a convex top surface.