Invention Grant
- Patent Title: Variation resistant 3T3R binary weight cell with low output current and high on/off ratio
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Application No.: US16448820Application Date: 2019-06-21
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Publication No.: US10832774B2Publication Date: 2020-11-10
- Inventor: Ryan M. Hatcher , Titash Rakshit , Jorge Kittl , Rwik Sengupta , Dharmendar Palle , Joon Goo Hong
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: The Farrell Law Firm, P.C.
- Main IPC: G11C13/00
- IPC: G11C13/00 ; G11C11/22 ; G11C11/16

Abstract:
A weight cell and device are herein disclosed. The weight cell includes a first field effect transistor (FET) and a first resistive memory element connected to a drain of the first FET, a second FET and a second resistive memory element connected to a drain of the second FET, the drain of the first FET is connected to a gate of the second FET and the drain of the second FET is connected to a gate of the first FET, and a third FET, and a load resistor connected to a drain of the third FET.
Public/Granted literature
- US20200279605A1 VARIATION RESISTANT 3T3R BINARY WEIGHT CELL WITH LOW OUTPUT CURRENT AND HIGH ON/OFF RATIO Public/Granted day:2020-09-03
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