- 专利标题: Semiconductor structure cutting process and structures formed thereby
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申请号: US16407730申请日: 2019-05-09
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公开(公告)号: US10833077B2公开(公告)日: 2020-11-10
- 发明人: Chih-Chang Hung , Chia-Jen Chen , Ming-Ching Chang , Shu-Yuan Ku , Yi-Hsuan Hsiao , I-Wei Yang
- 申请人: Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址: TW Hsinchu
- 专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人: Taiwan Semiconductor Manufacturing Co., Ltd.
- 当前专利权人地址: TW Hsinchu
- 代理机构: Slater Matsil, LLP
- 主分类号: H01L27/088
- IPC分类号: H01L27/088 ; H01L29/08 ; H01L29/66 ; H01L29/423 ; H01L29/06 ; H01L21/8234 ; H01L21/3213 ; H01L21/311 ; H01L29/49 ; H01L21/62 ; H01L21/762 ; H01L21/283 ; H01L29/78 ; H01L21/02 ; H01L21/3105 ; H01L21/321
摘要:
Methods of cutting gate structures, and structures formed, are described. In an embodiment, a structure includes first and second gate structures over an active area, and a gate cut-fill structure. The first and second gate structures extend parallel. The active area includes a source/drain region disposed laterally between the first and second gate structures. The gate cut-fill structure has first and second primary portions and an intermediate portion. The first and second primary portions abut the first and second gate structures, respectively. The intermediate portion extends laterally between the first and second primary portions. First and second widths of the first and second primary portions along longitudinal midlines of the first and second gate structures, respectively, are each greater than a third width of the intermediate portion midway between the first and second gate structures and parallel to the longitudinal midline of the first gate structure.
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