Invention Grant
- Patent Title: Read assist circuitry for memory applications
-
Application No.: US15691001Application Date: 2017-08-30
-
Publication No.: US10854280B2Publication Date: 2020-12-01
- Inventor: Abhairaj Singh , Vivek Asthana , Monu Rathore , Ankur Goel , Nikhil Kaushik , Rachit Ahuja , Rahul Mathur , Bikas Maiti , Yew Keong Chong
- Applicant: ARM Limited
- Applicant Address: GB Cambridge
- Assignee: Arm Limited
- Current Assignee: Arm Limited
- Current Assignee Address: GB Cambridge
- Agency: Pramudji Law Group PLLC
- Agent Ari Pramudji
- Main IPC: G11C11/408
- IPC: G11C11/408 ; G11C11/419 ; G11C11/418

Abstract:
Various implementations described herein are directed to an integrated circuit having a wordline driver coupled to a bitcell via a wordline. The integrated circuit may include a read assist transistor coupled to the wordline between the wordline driver and the bitcell. While activated, the read assist transistor may generate an adaptive underdrive on the wordline, the level of which depends on the process, temperature and voltage of operation of the memory, when the wordline is selected and driven by the wordline driver.
Public/Granted literature
- US20190066772A1 Read Assist Circuitry for Memory Applications Public/Granted day:2019-02-28
Information query
IPC分类: