公开(公告)号：US11475944B2

公开(公告)日：2022-10-18

申请号：US17107559

申请日：2020-11-30

Applicant: Arm Limited

Inventor： Rahul Mathur ,  Vivek Asthana ,  Ankur Garcia Goel ,  Nikhil Kaushik ,  Rachit Ahuja ,  Bikas Maiti ,  Yew Keong Chong

IPC: G11C11/419 ,  G11C11/418

Abstract: Various implementations described herein are directed to an integrated circuit having a wordline driver coupled to a bitcell via a wordline. The integrated circuit may include a read assist transistor coupled to the wordline between the wordline driver and the bitcell. While activated, the read assist transistor may generate an adaptive underdrive on the wordline, the level of which depends on the process, temperature and voltage of operation of the memory, when the wordline is selected and driven by the wordline driver.

公开(公告)号：US10854280B2

公开(公告)日：2020-12-01

申请号：US15691001

申请日：2017-08-30

Applicant: ARM Limited

Inventor： Abhairaj Singh ,  Vivek Asthana ,  Monu Rathore ,  Ankur Goel ,  Nikhil Kaushik ,  Rachit Ahuja ,  Rahul Mathur ,  Bikas Maiti ,  Yew Keong Chong

IPC: G11C11/408 ,  G11C11/419 ,  G11C11/418

Abstract: Various implementations described herein are directed to an integrated circuit having a wordline driver coupled to a bitcell via a wordline. The integrated circuit may include a read assist transistor coupled to the wordline between the wordline driver and the bitcell. While activated, the read assist transistor may generate an adaptive underdrive on the wordline, the level of which depends on the process, temperature and voltage of operation of the memory, when the wordline is selected and driven by the wordline driver.

公开(公告)号：US20210082496A1

公开(公告)日：2021-03-18

申请号：US17107559

申请日：2020-11-30

Applicant: Arm Limited

Inventor： Rahul Mathur ,  Vivek Asthana ,  Ankur Garcia Goel ,  Nikhil Kaushik ,  Rachit Ahuja ,  Bikas Maiti ,  Yew Keong Chong

IPC: G11C11/419 ,  G11C11/418

Abstract: Various implementations described herein are directed to an integrated circuit having a wordline driver coupled to a bitcell via a wordline. The integrated circuit may include a read assist transistor coupled to the wordline between the wordline driver and the bitcell. While activated, the read assist transistor may generate an adaptive underdrive on the wordline, the level of which depends on the process, temperature and voltage of operation of the memory, when the wordline is selected and driven by the wordline driver.

公开(公告)号：US20190066772A1

公开(公告)日：2019-02-28

申请号：US15691001

申请日：2017-08-30

Applicant: ARM Limited

Inventor： Abhairaj Singh ,  Vivek Asthana ,  Monu Rathore ,  Ankur Goel ,  Nikhil Kaushik ,  Rachit Ahuja ,  Rahul Mathur ,  Bikas Maiti ,  Yew Keong Chong

IPC: G11C11/419

Abstract: Various implementations described herein are directed to an integrated circuit having a wordline driver coupled to a bitcell via a wordline. The integrated circuit may include a read assist transistor coupled to the wordline between the wordline driver and the bitcell. While activated, the read assist transistor may generate an adaptive underdrive on the wordline, the level of which depends on the process, temperature and voltage of operation of the memory, when the wordline is selected and driven by the wordline driver.