Invention Grant
- Patent Title: Semiconductor structures having increased channel strain using fin release in gate regions
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Application No.: US16375890Application Date: 2019-04-05
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Publication No.: US10886385B2Publication Date: 2021-01-05
- Inventor: Kangguo Cheng , Bruce B. Doris , Ali Khakifirooz , Darsen D. Lu , Alexander Reznicek , Kern Rim
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Douglas Pearson
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L21/8234 ; H01L21/8238 ; H01L29/66 ; H01L29/165 ; H01L21/84 ; H01L29/78 ; H01L21/02 ; H01L21/033 ; H01L21/32 ; H01L21/324 ; H01L29/10 ; H01L29/161
Abstract:
A method of introducing strain in a channel region of a FinFET device includes forming a fin structure on a substrate, the fin structure having a lower portion comprising a sacrificial layer and an upper portion comprising a strained semiconductor layer; and removing a portion of the sacrificial layer corresponding to a channel region of the FinFET device so as to release the upper portion of the fin structure from the substrate in the channel region.
Public/Granted literature
- US20190237561A1 SEMICONDUCTOR STRUCTURES HAVING INCREASED CHANNEL STRAIN USING FIN RELEASE IN GATE REGIONS Public/Granted day:2019-08-01
Information query
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