- 专利标题： Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt comprising substrates
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申请号： US15751612申请日： 2016-08-09
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公开(公告)号： US10899945B2公开(公告)日： 2021-01-26
- 发明人: Robert Reichardt , Max Siebert , Yongqing Lan , Michael Lauter , Sheik Ansar Usman Ibrahim , Reza M. Golzarian , Te Yu Wei , Haci Osman Guevenc , Julian Proelss , Leonardus Leunissen
- 申请人： BASF SE
- 申请人地址： DE Ludwigshafen
- 专利权人： BASF SE
- 当前专利权人： BASF SE
- 当前专利权人地址： DE Ludwigshafen
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 国际申请： PCT/EP2016/068964 WO 20160809
- 国际公布： WO2017/025536 WO 20170216
- 主分类号： C09G1/02
- IPC分类号： C09G1/02 ; C09G1/04 ; C09K3/14 ; H01L21/306 ; H01L21/321 ; H01L21/461
摘要：
Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.
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