公开(公告)号：US10899945B2

公开(公告)日：2021-01-26

申请号：US15751612

申请日：2016-08-09

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M. Golzarian ,  Te Yu Wei ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

公开(公告)号：US11725117B2

公开(公告)日：2023-08-15

申请号：US17312821

申请日：2019-12-11

Applicant: BASF SE

Inventor： Haci Osman Guevenc ,  Michael Lauter ,  Te Yu Wei ,  Wei Lan Chiu ,  Reza M. Golzarian ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14

CPC classification number: C09G1/02 ,  H01L21/3212 ,  C09K3/1463

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：US11286402B2

公开(公告)日：2022-03-29

申请号：US15538334

申请日：2015-12-11

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza Golzarian ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  C09K13/00 ,  H01L21/461 ,  C09G1/04

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R1, R2, R3, R4, R5 and R6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C2-C10-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US09862862B2

公开(公告)日：2018-01-09

申请号：US14891175

申请日：2014-05-05

Applicant: BASF SE

Inventor： Yongqing Lan ,  Peter Przybylski ,  Zhenyu Bao ,  Julian Proelss

IPC: C09G1/02 ,  H01L21/306 ,  C09K3/14 ,  H01L21/02

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/02024 ,  H01L21/30612 ,  H01L21/30625

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

公开(公告)号：US09828527B2

公开(公告)日：2017-11-28

申请号：US15336245

申请日：2016-10-27

Applicant: BASF SE

Inventor： Yongqing Lan ,  Peter Przybylski ,  Zhenyu Bao ,  Julian Proelss

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/306

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

公开(公告)号：US20170044402A1

公开(公告)日：2017-02-16

申请号：US15336245

申请日：2016-10-27

Applicant: BASF SE

Inventor： Yongqing Lan ,  Peter Przybylski ,  Zhenyu Bao ,  Julian Proelss

IPC: C09G1/02 ,  H01L21/306 ,  C09K3/14

CPC classification number: C09G1/02 ,  C09K3/1436 ,  C09K3/1463 ,  H01L21/30625

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components:(A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6(B) N,N,N′,N′-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid(C) water(D) optionally one or more further constituents,wherein the pH of the composition is in the range of from 2 to 6.

Abstract translation: 其中所述组合物的pH在2至6的范围内。

公开(公告)号：US11264250B2

公开(公告)日：2022-03-01

申请号：US16094381

申请日：2016-04-27

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M Golzarian ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C5-C20-alkyl, C5-C20-alkenyl, C5-C20-alkylacyl or C5-C20-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US10570316B2

公开(公告)日：2020-02-25

申请号：US15325464

申请日：2015-07-14

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Haci Osman Guevenc ,  Julian Proelss ,  Sheik Ansar Usman Ibrahim ,  Reza Golzarian

IPC: C09G1/04

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

公开(公告)号：US10385236B2

公开(公告)日：2019-08-20

申请号：US15538851

申请日：2015-12-22

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza Golzarian ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: H01L21/461 ,  C09G1/02 ,  H01L21/306 ,  H01L21/321 ,  H01L21/302 ,  H01L21/304 ,  H01L21/463 ,  B24B37/20 ,  C09K3/14 ,  C23F3/06 ,  H01L21/768

Abstract: A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US10090159B2

公开(公告)日：2018-10-02

申请号：US14768825

申请日：2014-05-05

Applicant: BASF SE

Inventor： Yongqing Lan ,  Peter Przybylski ,  Zhenyu Bao ,  Julian Proelss

IPC: C09K13/06 ,  H01L21/306 ,  C09G1/02 ,  C09K3/14 ,  H01L21/321

Abstract: Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of −15 mV or below at a pH in the range of from 2 to 6 (B) one or more polymers selected from the group consisting of N-vinyl-homopolymers and N-vinyl copolymers (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.