公开(公告)号：US10899945B2

公开(公告)日：2021-01-26

申请号：US15751612

申请日：2016-08-09

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M. Golzarian ,  Te Yu Wei ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

公开(公告)号：US11286402B2

公开(公告)日：2022-03-29

申请号：US15538334

申请日：2015-12-11

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza Golzarian ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  C09K13/00 ,  H01L21/461 ,  C09G1/04

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R1, R2, R3, R4, R5 and R6 are independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C2-C10-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US10227506B2

公开(公告)日：2019-03-12

申请号：US15536447

申请日：2015-12-04

Applicant: BASF SE

Inventor： Max Siebert ,  Michael Lauter ,  Yongqing Lan ,  Robert Reichardt ,  Alexandra Muench ,  Manuel Six ,  Gerald Daniel ,  Bastian Marten Noller ,  Kevin Huang ,  Sheik Ansar Usman Ibrahim

IPC: C09G1/04 ,  C09G1/02 ,  C09K13/00 ,  H01L21/304 ,  H01L21/461

Abstract: Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6.

公开(公告)号：US11168239B2

公开(公告)日：2021-11-09

申请号：US16860793

申请日：2020-04-28

Applicant: BASF SE

Inventor： Robert Reichardt ,  Martin Kaller ,  Michael Lauter ,  Yuzhuo Li ,  Andreas Klipp

IPC: H01L21/461 ,  H01L21/321 ,  H01L21/306 ,  H01L21/304 ,  H01L21/02 ,  C09K3/14 ,  C09G1/04 ,  C09G1/02 ,  C09G1/00

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

公开(公告)号：US10738219B2

公开(公告)日：2020-08-11

申请号：US15538313

申请日：2015-12-16

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M Golzarian ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: H01L21/321 ,  H01L21/306 ,  H01L21/304 ,  H01L21/302 ,  C09K3/14 ,  C09G1/04 ,  C09G1/02 ,  C09G1/00 ,  C09D7/63 ,  C09D5/00 ,  C09D133/08 ,  C08K5/5435 ,  B24B37/04

Abstract: Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and/or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein R1 is H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US10647900B2

公开(公告)日：2020-05-12

申请号：US14905703

申请日：2014-07-01

Applicant: BASF SE

Inventor： Robert Reichardt ,  Martin Kaller ,  Michael Lauter ,  Yuzhuo Li ,  Andreas Klipp

IPC: C09G1/00 ,  C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/02 ,  H01L21/304 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461

Abstract: A chemical-mechanical polishing (CMP) composition is provided comprising (A) one or more compounds selected from the group of benzotriazole derivatives which act as corrosion inhibitors and (B) inorganic particles, organic particles, or a composite or mixture thereof. The invention also relates to the use of certain compounds selected from the group of benzotriazole derivatives as corrosion inhibitors, especially for increasing the selectivity of a chemical mechanical polishing (CMP) composition for the removal of tantalum or tantalum nitride from a substrate for the manufacture of a semiconductor device in the presence of copper on said substrate.

公开(公告)号：US11713369B2

公开(公告)日：2023-08-01

申请号：US16761947

申请日：2018-10-30

Applicant: BASF SE

Inventor： Robert Reichardt ,  Matthias Maier ,  Tim Meisenzahl

IPC: C08G18/48 ,  C08G18/28 ,  C09D175/08 ,  C09D7/43 ,  C09D7/20 ,  C08L75/08 ,  C08G18/20

CPC classification number: C08G18/4833 ,  C08G18/2063 ,  C08G18/2825 ,  C09D7/20 ,  C09D7/43 ,  C09D175/08 ,  C08L75/08

Abstract: The presently claimed invention relates to a composition comprising polyurethane polymer and diluents, which is used as an additive in coating formulations, in particular water-borne paint and coating formulations, for reducing the effect of the viscosity loss caused by the addition of colorants/pigment pastes thereby improving the viscosity stability in tinted coating formulations as well as the method for preparing the composition.

公开(公告)号：US11264250B2

公开(公告)日：2022-03-01

申请号：US16094381

申请日：2016-04-27

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M Golzarian ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C5-C20-alkyl, C5-C20-alkenyl, C5-C20-alkylacyl or C5-C20-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

公开(公告)号：US10570316B2

公开(公告)日：2020-02-25

申请号：US15325464

申请日：2015-07-14

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Haci Osman Guevenc ,  Julian Proelss ,  Sheik Ansar Usman Ibrahim ,  Reza Golzarian

IPC: C09G1/04

Abstract: A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

公开(公告)号：US10385236B2

公开(公告)日：2019-08-20

申请号：US15538851

申请日：2015-12-22

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza Golzarian ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: H01L21/461 ,  C09G1/02 ,  H01L21/306 ,  H01L21/321 ,  H01L21/302 ,  H01L21/304 ,  H01L21/463 ,  B24B37/20 ,  C09K3/14 ,  C23F3/06 ,  H01L21/768

Abstract: A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.