公开(公告)号：US11725117B2

公开(公告)日：2023-08-15

申请号：US17312821

申请日：2019-12-11

Applicant: BASF SE

Inventor： Haci Osman Guevenc ,  Michael Lauter ,  Te Yu Wei ,  Wei Lan Chiu ,  Reza M. Golzarian ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  H01L21/321 ,  C09K3/14

CPC classification number: C09G1/02 ,  H01L21/3212 ,  C09K3/1463

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：US10899945B2

公开(公告)日：2021-01-26

申请号：US15751612

申请日：2016-08-09

Applicant: BASF SE

Inventor： Robert Reichardt ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M. Golzarian ,  Te Yu Wei ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  C09G1/04 ,  C09K3/14 ,  H01L21/306 ,  H01L21/321 ,  H01L21/461

Abstract: Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer≥1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

公开(公告)号：US11993729B2

公开(公告)日：2024-05-28

申请号：US16765665

申请日：2018-11-12

Applicant: BASF SE

Inventor： Christian Daeschlein ,  Max Siebert ,  Yongqing Lan ,  Michael Lauter ,  Sheik Ansar Usman Ibrahim ,  Reza M Golzarian ,  Te Yu Wei ,  Haci Osman Guevenc ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.

公开(公告)号：US20240002698A1

公开(公告)日：2024-01-04

申请号：US18368581

申请日：2023-09-15

Applicant: BASF SE

Inventor： Haci Osman Guevenc ,  Michael Lauter ,  Te Yu Wei ,  Wei Lan Chiu ,  Reza M. Golzarian ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.

公开(公告)号：US20230416570A1

公开(公告)日：2023-12-28

申请号：US18368032

申请日：2023-09-14

Applicant: BASF SE

Inventor： Haci Osman GUEVENC ,  Michael Lauter ,  Te Yu Wei ,  Wei Lan Chiu ,  Reza M. Golzarian ,  Julian Proelss ,  Leonardus Leunissen

IPC: C09G1/02 ,  C09K3/14 ,  H01L21/321

CPC classification number: C09G1/02 ,  H01L21/3212 ,  C09K3/1463

Abstract: The presently claimed invention relates to a chemical-mechanical polishing (CMP) composition and chemical-mechanical polishing (CMP) methods. The presently claimed invention particularly relates to a composition and process for chemical-mechanical polishing of substrates containing copper and ruthenium, specifically, semiconductor substrates containing copper and ruthenium.