- 专利标题： Three-dimensional memory device including electrically conductive layers with molybdenum-containing liners
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申请号： US16441439申请日： 2019-06-14
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公开(公告)号： US10916504B2公开(公告)日： 2021-02-09
- 发明人: Yusuke Mukae , Naoki Takeguchi , Kensuke Yamaguchi , Raghuveer S. Makala , Yujin Terasawa
- 申请人： SANDISK TECHNOLOGIES LLC
- 申请人地址： US TX Addison
- 专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人地址： US TX Addison
- 代理机构： The Marbury Law Group PLLC
- 主分类号： H01L21/28
- IPC分类号： H01L21/28 ; H01L29/49 ; H01L27/11582 ; H01L23/532 ; H01L21/768
摘要：
An alternating stack of insulating layers and sacrificial material layers is formed over a substrate. Memory stack structures are formed through the alternating stack. Each of the memory stack structures includes a memory film and a vertical semiconductor channel. Backside recesses are formed by removing the sacrificial material layers selective to the insulating layers and the memory stack structures. Electrically conductive layers are formed in the backside recesses. Each of the electrically conductive layers includes a molybdenum-containing conductive liner and a metal fill portion including a metal other than molybdenum.
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