Invention Grant
- Patent Title: Capacitor cell and structure thereof
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Application No.: US16591064Application Date: 2019-10-02
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Publication No.: US10971495B2Publication Date: 2021-04-06
- Inventor: Chien-Yao Huang , Wun-Jie Lin , Chia-Wei Hsu , Yu-Ti Su
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: McClure, Qualey & Rodack, LLP
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/06 ; H01L29/08 ; H01L29/94 ; H01L27/02 ; H01L27/08 ; H01L29/861

Abstract:
A capacitor cell is provided. A first PMOS transistor is coupled between a power supply and a first node, and has a gate connected to a second node. A first NMOS transistor is coupled between a ground and the second node, and has a gate connected to the first node. A second PMOS transistor is coupled between the second node and the first node, and has a gate connected to the second node. A second NMOS transistor has a drain connected to the first node, a gate connected to the first node, and a source connected to the ground or the second node. The first and second PMOS transistors and the first and second NMOS transistors are arranged in the same row. The second PMOS transistor is disposed between the first PMOS transistor and the first and second NMOS transistors.
Public/Granted literature
- US20200035681A1 CAPACITOR CELL AND STRUCTURE THEREOF Public/Granted day:2020-01-30
Information query
IPC分类: