Invention Grant
- Patent Title: High electron mobility transistors and power amplifiers including said transistors having improved performance and reliability
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Application No.: US16555036Application Date: 2019-08-29
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Publication No.: US10971612B2Publication Date: 2021-04-06
- Inventor: Kyle Bothe , Evan Jones , Dan Namishia , Chris Hardiman , Fabian Radulescu , Terry Alcorn , Scott Sheppard , Bruce Schmukler
- Applicant: Cree, Inc.
- Applicant Address: US NC Durham
- Assignee: Cree, Inc.
- Current Assignee: Cree, Inc.
- Current Assignee Address: US NC Durham
- Agency: Myers Bigel, P.A.
- Main IPC: H01L31/101
- IPC: H01L31/101 ; H01L21/338 ; H01L29/778 ; H01L29/20 ; H01L29/205 ; H01L29/40 ; H01L29/45 ; H01L21/306 ; H01L21/765 ; H01L29/66 ; H01L29/417 ; H03F3/21 ; H03F1/02 ; H01L21/285
Abstract:
A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.
Information query
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