公开(公告)号：US20210175351A1

公开(公告)日：2021-06-10

申请号：US17180048

申请日：2021-02-19

申请人： Cree, Inc.

发明人： Kyle Bothe ,  Evan Jones ,  Dan Namishia ,  Chris Hardiman ,  Fabian Radulescu ,  Terry Alcorn ,  Scott Sheppard ,  Bruce Schmukler

IPC分类号： H01L29/778 ,  H01L21/306 ,  H03F1/02 ,  H01L29/40 ,  H03F3/21 ,  H01L21/285 ,  H01L29/45 ,  H01L29/417 ,  H01L29/20 ,  H01L29/66 ,  H01L21/765 ,  H01L29/205

摘要： A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.

公开(公告)号：US10923585B2

公开(公告)日：2021-02-16

申请号：US16440427

申请日：2019-06-13

申请人： Cree, Inc.

发明人： Kyle Bothe ,  Evan Jones ,  Dan Namishia ,  Chris Hardiman ,  Fabian Radulescu ,  Jeremy Fisher ,  Scott Sheppard

IPC分类号： H01L31/101 ,  H01L21/338 ,  H01L29/778 ,  H01L23/48 ,  H01L29/66 ,  H01L21/768

摘要： A high electron mobility transistor (HEMT) includes a substrate comprising a first surface and a second surface on opposing sides of the substrate, a channel layer on the first surface of the substrate opposite the substrate, a barrier layer on the channel layer, a source contact comprising a first ohmic contact on an upper surface of the barrier layer, and a via extending from the second surface of the substrate to the first ohmic contact.

公开(公告)号：US09786660B1

公开(公告)日：2017-10-10

申请号：US15073201

申请日：2016-03-17

申请人： Cree, Inc.

发明人： Donald Farrell ,  Simon Wood ,  Scott Sheppard ,  Dan Namishia

IPC分类号： H01L27/118 ,  H01L27/088 ,  H01L29/40 ,  H01L29/423 ,  H01L29/417

CPC分类号： H01L27/088 ,  H01L29/404 ,  H01L29/41758 ,  H01L29/4238

摘要： A transistor device includes a source contact extending in a first direction, a gate finger extending in the first direction adjacent the source contact, and a drain contact adjacent the gate finger, wherein the gate finger is between the drain contact and the source contact. The device further includes a gate jumper extending in the first direction, a gate bus connected to the gate jumper and the gate finger, and a gate signal distribution bar that is spaced apart from the gate bus in the first direction and that connects the gate jumper to the gate finger.

公开(公告)号：US09530647B2

公开(公告)日：2016-12-27

申请号：US14036799

申请日：2013-09-25

申请人： Cree, Inc.

发明人： Zoltan Ring ,  Dan Namishia

IPC分类号： H01L21/8234 ,  H01L21/04 ,  H01L21/285 ,  H01L21/443 ,  H01L21/311 ,  H01L29/423 ,  H01L21/28 ,  H01L29/66 ,  H01L29/20

CPC分类号： H01L21/049 ,  H01L21/0495 ,  H01L21/28114 ,  H01L21/28123 ,  H01L21/28587 ,  H01L21/31116 ,  H01L21/443 ,  H01L29/2003 ,  H01L29/42376 ,  H01L29/66553 ,  H01L29/6656 ,  H01L29/66621 ,  H01L29/66863

摘要： Provided are devices including ultra-short gates and methods of forming same. Methods include forming a first gate pattern on a semiconductor that includes a first recess having a first width. A dielectric spacer is formed on a sidewall of the first recess to define a second recess in the first recess that has a second width that is smaller than the first width. A gate having the second width is formed in the second recess.

摘要翻译： 提供了包括超短栅的器件及其形成方法。 方法包括在包括具有第一宽度的第一凹部的半导体上形成第一栅极图案。 电介质间隔件形成在第一凹槽的侧壁上，以在第一凹槽中限定具有小于第一宽度的第二宽度的第二凹槽。 具有第二宽度的门形成在第二凹部中。

公开(公告)号：US20220130985A1

公开(公告)日：2022-04-28

申请号：US17325576

申请日：2021-05-20

申请人： Cree, Inc.

发明人： Kyle Bothe ,  Terry Alcorn ,  Dan Namishia ,  Jia Guo ,  Matt King ,  Saptharishi Sriram ,  Jeremy Fisher ,  Fabian Radulescu ,  Scott Sheppard ,  Yueying Liu

IPC分类号： H01L29/778 ,  H01L29/40 ,  H01L29/66

摘要： A transistor device includes a semiconductor epitaxial layer structure including a channel layer and a barrier layer on the channel layer, a source contact and a drain contact on the barrier layer, an insulating layer on the semiconductor layer between the source contact and the drain contact, and a gate contact on the insulating layer. The gate contact includes a central portion that extends through the insulating layer and contacts the barrier layer and a drain side wing that extends laterally from the central portion of the gate toward the drain contact by a distance ΓD. The drain side wing of the gate contact is spaced apart from the barrier layer by a distance d1 that is equal to a thickness of the insulating layer. The distance ΓD is less than about 0.3 μm, and the distance d1 is less than about 80 nm.

公开(公告)号：US10971612B2

公开(公告)日：2021-04-06

申请号：US16555036

申请日：2019-08-29

申请人： Cree, Inc.

发明人： Kyle Bothe ,  Evan Jones ,  Dan Namishia ,  Chris Hardiman ,  Fabian Radulescu ,  Terry Alcorn ,  Scott Sheppard ,  Bruce Schmukler

IPC分类号： H01L31/101 ,  H01L21/338 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/45 ,  H01L21/306 ,  H01L21/765 ,  H01L29/66 ,  H01L29/417 ,  H03F3/21 ,  H03F1/02 ,  H01L21/285

摘要： A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.

公开(公告)号：US20210028127A1

公开(公告)日：2021-01-28

申请号：US17060540

申请日：2020-10-01

申请人： Cree, Inc.

发明人： Kyle Bothe ,  Dan Namishia ,  Fabian Radulescu ,  Scott Sheppard

IPC分类号： H01L23/00 ,  H01L23/528 ,  H01L23/31 ,  H01L23/66 ,  H01L23/64 ,  H01L25/065 ,  H01L25/00

摘要： A packaged electronic circuit includes a substrate having an upper surface, a first metal layer on the upper surface of the substrate, a first polymer layer on the first metal layer opposite the substrate, a second metal layer on the first polymer layer opposite the first metal layer, a dielectric layer on the first polymer layer and at least a portion of the second metal layer and a second polymer layer on the dielectric layer.

公开(公告)号：US20170271329A1

公开(公告)日：2017-09-21

申请号：US15073201

申请日：2016-03-17

申请人： Cree, Inc.

发明人： Donald Farrell ,  Simon Wood ,  Scott Sheppard ,  Dan Namishia

IPC分类号： H01L27/088 ,  H01L29/423 ,  H01L29/417 ,  H01L29/40

CPC分类号： H01L27/088 ,  H01L29/404 ,  H01L29/41758 ,  H01L29/4238

摘要： A transistor device includes a source contact extending in a first direction, a gate finger extending in the first direction adjacent the source contact, and a drain contact adjacent the gate finger, wherein the gate finger is between the drain contact and the source contact. The device further includes a gate jumper extending in the first direction, a gate bus connected to the gate jumper and the gate finger, and a gate signal distribution bar that is spaced apart from the gate bus in the first direction and that connects the gate jumper to the gate finger.

公开(公告)号：US20210359118A1

公开(公告)日：2021-11-18

申请号：US16876752

申请日：2020-05-18

申请人： Cree, Inc.

发明人： Fabian Radulescu ,  Scott Sheppard ,  Dan Namishia ,  Chris Hardiman ,  Terry Alcorn ,  Kyle Bothe ,  Jennifer Gao

IPC分类号： H01L29/778 ,  H01L29/20 ,  H01L29/40 ,  H01L29/66

摘要： A high-electron mobility transistor (HEMT) that includes a substrate, a group III-Nitride channel layer on the substrate, a group III-Nitride barrier layer on the group III-Nitride channel layer, the group III-Nitride barrier layer that includes a higher bandgap than a bandgap of the group III-Nitride channel layer, a source electrically coupled to the group III-Nitride barrier layer, a gate electrically coupled to the group III-Nitride barrier layer, and a drain electrically coupled to the group III-Nitride barrier layer. The source and/or the drain are structured and arranged to extend through the group III-Nitride barrier layer into the group III-Nitride channel layer.

公开(公告)号：US10811370B2

公开(公告)日：2020-10-20

申请号：US15960693

申请日：2018-04-24

申请人： Cree, Inc.

发明人： Kyle Bothe ,  Dan Namishia ,  Fabian Radulescu ,  Scott Sheppard

IPC分类号： H01L23/00 ,  H01L23/528 ,  H01L23/31 ,  H01L23/66 ,  H01L23/64 ,  H01L25/065 ,  H01L25/00

摘要： A packaged electronic circuit includes a substrate having an upper surface, a first metal layer on the upper surface of the substrate, a first polymer layer on the first metal layer opposite the substrate, a second metal layer on the first polymer layer opposite the first metal layer, a dielectric layer on the first polymer layer and at least a portion of the second metal layer and a second polymer layer on the dielectric layer.