公开(公告)号：US10971612B2

公开(公告)日：2021-04-06

申请号：US16555036

申请日：2019-08-29

Applicant: Cree, Inc.

Inventor： Kyle Bothe ,  Evan Jones ,  Dan Namishia ,  Chris Hardiman ,  Fabian Radulescu ,  Terry Alcorn ,  Scott Sheppard ,  Bruce Schmukler

IPC: H01L31/101 ,  H01L21/338 ,  H01L29/778 ,  H01L29/20 ,  H01L29/205 ,  H01L29/40 ,  H01L29/45 ,  H01L21/306 ,  H01L21/765 ,  H01L29/66 ,  H01L29/417 ,  H03F3/21 ,  H03F1/02 ,  H01L21/285

Abstract: A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.

公开(公告)号：US20210175351A1

公开(公告)日：2021-06-10

申请号：US17180048

申请日：2021-02-19

Applicant: Cree, Inc.

Inventor： Kyle Bothe ,  Evan Jones ,  Dan Namishia ,  Chris Hardiman ,  Fabian Radulescu ,  Terry Alcorn ,  Scott Sheppard ,  Bruce Schmukler

IPC: H01L29/778 ,  H01L21/306 ,  H03F1/02 ,  H01L29/40 ,  H03F3/21 ,  H01L21/285 ,  H01L29/45 ,  H01L29/417 ,  H01L29/20 ,  H01L29/66 ,  H01L21/765 ,  H01L29/205

Abstract: A power amplifier comprising a GaN-based high electron mobility transistor (HEMT) device, wherein a power added efficiency (PAE) of the power amplifier is greater than 32% at P1DB during operation of the power amplifier between 26.5 GHz and 30.5 GHz.