Invention Grant
- Patent Title: Semiconductor light emitting device
-
Application No.: US17005643Application Date: 2020-08-28
-
Publication No.: US10978618B2Publication Date: 2021-04-13
- Inventor: JuHeon Yoon , Jung Hwan Kil , Tae Hun Kim , Hwa Ryong Song , Jae In Sim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si
- Agency: Lee IP Law, P.C.
- Priority: KR10-2018-0025090 20180302
- Main IPC: H01L33/40
- IPC: H01L33/40 ; H01L33/06 ; H01L33/12 ; H01L33/22 ; H01L33/50 ; H01L33/60 ; H01L33/62 ; H01L33/42 ; H01L33/46

Abstract:
A semiconductor light emitting device includes a light emitting structure having a first conductivity-type semiconductor layer, an active layer and a second conductivity-type semiconductor layer, a transparent electrode layer on the second conductivity-type semiconductor layer and spaced apart from an edge of the second conductivity-type semiconductor layer, a first insulating layer on the light emitting structure to cover the transparent electrode layer and including a plurality of holes connected to the transparent electrode layer, and a reflective electrode layer on the first insulating layer and connected to the transparent electrode layer through the plurality of holes.
Information query
IPC分类: