- 专利标题: Substrate treatment method and substrate treatment apparatus
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申请号: US16132218申请日: 2018-09-14
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公开(公告)号: US10985040B2公开(公告)日: 2021-04-20
- 发明人: Sang Hyun Ji , Yong Soo Moon , Gun Bum Lee
- 申请人: AP SYSTEMS INC.
- 申请人地址: KR Hwaseong-Si
- 专利权人: AP SYSTEMS INC.
- 当前专利权人: AP SYSTEMS INC.
- 当前专利权人地址: KR Hwaseong-Si
- 代理机构: Renaissance IP Law Group LLP
- 优先权: KR10-2017-0127913 20170929
- 主分类号: G01J5/00
- IPC分类号: G01J5/00 ; G01K1/00 ; G01K13/00 ; H01L21/67 ; G01J5/02 ; G01J5/08
摘要:
A substrate treatment method in accordance with an exemplary embodiment includes: heating a substrate, for a substrate treatment process, so that a temperature of the substrate reaches a target temperature; calculating the temperature of the substrate using a sensor located facing the substrate while heating the substrate; and controlling an operation of a heating part configured to heat the substrate according to the temperature calculated from the calculating the temperature, wherein the calculating the temperature comprises: measuring a total radiant energy (Et) radiated from the substrate using the sensor; calculating a corrected total emissivity (εt0) by applying a correction value for correcting the total emissivity (εt) which is the emissivity of the radiant energy (Et); and calculating the temperature (Ts) of the substrate using the total radiant energy (Et) and the corrected total emissivity (εt0).
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