Abstract:
The present inventive concept relates to a substrate processing apparatus and a substrate processing method, which can accurately measure temperature in even a low-temperature region, thus making it possible to efficiently manage heat. The substrate processing apparatus comprises: a chamber for providing a processing space in which a substrate is processed; a substrate support provided in the processing space of the chamber in order to support the substrate; a heater provided with a plurality of semiconductor laser modules that emit light toward a first surface of the substrate; and a pyrometer which is provided on the side of a second surface of the substrate facing the first surface and detects light emitted from the substrate to measure the temperature of the substrate. The main light-emitting wavelength of the plurality of semiconductor laser modules may be shorter than the measurement wavelength of the pyrometer.
Abstract:
The present disclosure relates to a thin film manufacturing apparatus including a chamber having an inner process space of a substrate, a substrate support unit connected to the chamber to support the substrate in the chamber, a heat source unit connected to the chamber and disposed opposite to the substrate support unit, a plasma generation unit connected to one side of the chamber to supply radicals between the substrate support unit and the heat source unit, and a baffle connected to the chamber and including a movement passage of the radicals therein and a plurality of first exhaust holes communicating with the movement passage, which are formed in a top surface thereof. The thin film manufacturing apparatus may improve uniformity of the thin film formed on the substrate.
Abstract:
The present disclosure relates to a thin film manufacturing apparatus including a chamber having an inner process space of a substrate, a substrate support unit connected to the chamber to support the substrate in the chamber, a heat source unit connected to the chamber and disposed opposite to the substrate support unit, a plasma generation unit connected to one side of the chamber to supply radicals between the substrate support unit and the heat source unit, and a baffle connected to the chamber and including a movement passage of the radicals therein and a plurality of first exhaust holes communicating with the movement passage, which are formed in a top surface thereof. The thin film manufacturing apparatus may improve uniformity of the thin film formed on the substrate.
Abstract:
The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a laser-processed pattern by irradiating a laser beam from above a base; and forming a wet-etched pattern that continues from the laser-processing pattern, by performing wet etching from above the base or from below the base on which the laser-processed pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.
Abstract:
The present invention discloses a method of manufacturing a shadow mask, wherein hybrid processing is used to form a mask pattern on the shadow mask, the method includes: forming a wet-etched pattern by performing wet etching from above a base; and forming a laser-processed pattern that continues from the wet-etched pattern, by performing laser processing from above the base or from below the base on which the wet-etched pattern is formed. The present invention uses hybrid processing including wet etching and laser processing for manufacturing a shadow mask. The method has an effect on solving the productivity degradation of the conventional laser processing and provides a shadow mask with high quality using wet etching.
Abstract:
The present disclosure controls the heat source unit such that a to-be-processed object in which a hydrogen-containing to-be-processed layer is formed is irradiated with light in two stages, and thus the electrical characteristics of a semiconductor device may be suppressed and prevented from being deteriorated due to hydrogen. That is, ultraviolet light (UV) which is firstly radiated may induce a chemical reaction for separating Si—H bonds in the to-be-processed layer, and infrared light (IR) which is secondly radiated may induce a thermal reaction for vaporizing the separated hydrogen from the Si—H bonds. As such, both a chemical reaction for separating bonds of hydrogen and other ions in the to-be-processed layer and a thermal reaction for vaporizing hydrogen are performed, and thus hydrogen may be more easily removed than a temperature at which hydrogen is vaporized from the to-be-processed layer by only a thermal reaction.
Abstract:
This invention relates to an apparatus and method for cleaning a photomask. This apparatus, suitable for use in removing an adhesive residue from a photomask, includes a photomask disposed such that a surface thereof on which an adhesive residue is left behind is directed downwards, a metal plate formed adjacent to the adhesive residue, and a laser generator for irradiating a laser onto the metal plate so that the adhesive residue is removed by heat generated from the metal plate.
Abstract:
The present invention relates to a heater block for a rapid thermal processing apparatus, and more particularly, to a heater block in which heating lamps are densely arranged in a tessellation. The tessellation has a structure such that the plurality of heating lamps are arranged at right angles to form a zigzag line, and the thus-formed zigzagged line is repeated such that the zigzagged line is combined with the adjacent zigzagged line. According to the present invention, a temperature gradient caused by a void between heating lamps is prevented, and heating lamps are densely arranged to increase heat density for a heat radiation area as opposed to conventional heater blocks, thus achieving improved heat treatment efficiency using less energy. In addition, fully uniform temperature control is enabled, in terms of sector allocated temperature control, even when the area to be independently controlled is enlarged as opposed to conventional heater blocks, thereby simplifying the configuration of a temperature control circuit.
Abstract:
The present invention relates to a heater block for a rapid thermal processing apparatus, wherein a plurality of lamp pockets (21) for accommodating heating lamps are arranged, and cooling water inlet ports (111a, 111b) and cooling water outlet ports (112a, 112b) are arranged such that the lamp pockets (21) are cooled by the flow of the cooling water fed via the cooling water inlet ports (111a, 111b) and discharged via the cooling water outlet ports (112a, 112b). In detail, the cooling water inlet ports (111a, 111b) and the cooling water outlet ports (112a, 112b) are separately arranged into an upper layer and a lower layer, such that the flow of the cooling water fed via the cooling water inlet ports (111a, 111b) and discharged via the cooling water outlet ports (112a, 112b) is divided into an upper layer and a lower layer. Preferably, cooling water dispersion means (140) are installed at entries of the cooling water inlet ports (111a, 111b) so as to disperse the cooling water in a lateral direction. According to the present invention, the cooling water flows separately in the upper layer and the lower layer to improve cooling efficiency, and particularly, lower portions of the lamp pockets, in which heat discharged by the heating lamps is concentrated, can be maximally cooled. In addition, the cooling water dispersion means prevents the formation of a dead zone, thereby uniformly cooling the entirety of the heater block.
Abstract:
The present invention relates to a heater block for a rapid thermal processing apparatus, and more particularly, to a heater block in which heating lamps are densely arranged in a tessellation. The tessellation has a structure such that the plurality of heating lamps are arranged at right angles to form a zigzag line, and the thus-formed zigzagged line is repeated such that the zigzagged line is combined with the adjacent zigzagged line. According to the present invention, a temperature gradient caused by a void between heating lamps is prevented, and heating lamps are densely arranged to increase heat density for a heat radiation area as opposed to conventional heater blocks, thus achieving improved heat treatment efficiency using less energy. In addition, fully uniform temperature control is enabled, in terms of sector allocated temperature control, even when the area to be independently controlled is enlarged as opposed to conventional heater blocks, thereby simplifying the configuration of a temperature control circuit.